TITLE

Properties of Heusler alloy Co2Cr1-xFexAl superlattices and spin valves

AUTHOR(S)
Kelekar, R.; Clemens, B. M.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p232501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the properties of epitaxial Co2Cr1-xFexAl-based multilayers grown by dc magnetron sputtering upon MgO substrates. Co2Cr1-xFexAl/Cr superlattices of high epitaxial quality can be grown, though no evidence for antiferromagnetic coupling is observed. Simple spin-valve trilayers of the form Co2Cr1-xFexAl/Cu/Co90Fe10 show large giant magnetoresistances of up to 6.8% at room temperature, comparable to the highest achieved in conventional exchange-biased spin valves.
ACCESSION #
17328470

 

Related Articles

  • Pinning effect and thermal stability study in L10 FePt-pinned spin valves. Zhao, Hui; Zhang, Zongzhi; Ma, Bin; Jin, Q. Y. // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p023909 

    L10-ordered FePt alloy is introduced into the synthetic antiferromagnetically coupled spin valves as an exchange pinning layer. Large switching field of 1824 Oe for the reference layer and a high giant magnetoresistance (GMR) ratio of 7.0% are observed in such FePt-pinned spin valves, which are...

  • Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes. Kodama, K.; Furubayashi, T.; Sukegawa, H.; Nakatani, T. M.; Inomata, K.; Hono, K. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p07E905 

    We report the current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001) single crystal substrate. The bottom CMS layer...

  • Large magnetoresistance in current-perpendicular-to-plane pseudo spin-valves using Co2Fe(Ga0.5Ge0.5) Heusler alloy and AgZn spacer. Ye Du; Furubayashi, T.; Sasaki, T. T.; Sakuraba, Y.; Takahashi, Y. K.; Hono, K. // Applied Physics Letters;2015, Vol. 107 Issue 11, p1 

    Fully epitaxial pseudo spin-valves (PSVs) using 10-nm-thick Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers and a 5-nm-thick AgZn space layer annealed at 630°C show a large current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) output with resistance-change area product, ΔRA, of...

  • Spin-dependent transport in antiferromagnetic tunnel junctions. Kalitsov, A.; Bea, H.; Baltz, V.; Chshiev, M. // Applied Physics Letters;9/22/2014, Vol. 105 Issue 12, p1 

    We investigate the behaviour of spin transfer torque (STT) and tunnelling magnetoresistance (TMR) in epitaxial antiferromagnetic-based tunnel junctions using tight binding calculations in the framework of the Keldysh formalism. We find that the STT out-of-plane component exhibits a staggered...

  • Tunneling magnetoresistance in spin valves exchange biased with metallic antiferromagnet La0.45Sr0.55MnO3. Muduli, P. K.; Budhani, R. C. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p103924-1 

    We present a detailed study of tunnel magnetoresistance (TMR) in La0.45Sr0.55MnO3/La0.67Sr0.33MnO3/SrTiO3/Co spin valve structures. The nonlinear current-voltage (I-V) characteristics of the 25×25 μm2 junctions, when modeled in the framework of elastic tunneling through trapezoidal...

  • Magnetic structure variations during giant magnetoresistance training in spin valves with picoscale antiferromagnetic layers. Moyerman, S.; Eckert, J. C.; Borchers, J. A.; Perdue, K. L.; Doucet, M.; Sparks, P. D.; Carey, M. J. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08R505 

    Microscopic models of exchange bias focus on the formation of domains in the antiferromagnet or the ferromagnet, or on a small induced moment in the antiferromagnet. Previous giant magnetoresistance (GMR) measurements, however, reveal exchange bias and training effects in CoFe-based spin valves...

  • Effects of underlayer on one-directional anisotropy in spin-valve films without any antiferromagnetic layers. Noma, Kenji; Kanai, Hitoshi // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p6669 

    The magnetoresistive (MR) characteristics of spin-valve films with no antiferromagnetic layer were investigated. The films were deposited with various underlayer materials and the one-directional anisotropy in MR curves of the film with Ta underlayer turned out very strong anisotropy compared...

  • Influence of the domain structure of nano-oxide layers on the transport properties of specular spin valves. Ventura, J.; Sousa, J. B.; Veloso, A.; Freitas, P. P. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p09E502 

    Specular spin valves show enhanced giant magnetoresistive ratio when compared to other simpler, spin valve structures as a result of specular reflection in nano-oxide layers (NOLs) formed by the partial oxidation of the CoFe pinned and free layers. The oxides forming the NOL were recently shown...

  • Spin valves with synthetic exchange bias Co70Ni10Pt20/Ru/CoFe. Qiu, J. J.; Li, K. B.; Zheng, Y. K.; Luo, P.; Wu, Y. H. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08R501 

    Co70Ni10Pt20/Ru/Co90Fe10 trilayer was used as pinning/pinned layer in spin valves after deposition condition of CoNiPt was studied. The influence of hard-layer, soft-layer, and Cu-spacer-layer thicknesses on exchange bias, interlayer coupling, free-layer coercivity, and magnetoresistance (MR)...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics