Evidence of native oxides on the capping and substrate of Permalloy gratings by magneto-optical spectroscopy in the zeroth- and first-diffraction orders

Antos, Roman; Mistrik, Jan; Yamaguchi, Tomuo; Visnovsky, Stefan; Demokritov, Sergej O.; Hillebrands, Burkard
June 2005
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p231101
Academic Journal
Magneto-optical Kerr effect (MOKE) spectroscopy in the zeroth- and first-diffraction orders at polar magnetization is applied to Permalloy wire gratings deposited on Si substrates and protected by Cr capping. The experimental MOKE data are compared with data simulated using the local modes method. The extensive simulations of the MOKE spectroscopic parameters exhibit significant sensitivity to t(Cr2O3) and t(SiO2), the thicknesses of native oxide layers developed on the capping and the substrate, respectively. The approach may be useful for monitoring the basic micromagnetic properties of small elements with nanometer-scale resolution, as well as for monitoring the deposition processes and aging of magnetic nanostructures in magnetic recording and magnetic random access memory technologies.


Related Articles

  • High magnetic and thermal stability of nanopatterned [Co/Pd] based pseudo spin-valves with perpendicular anisotropy for 1 Gb magnetic random access memory applications. Thiyagarajah, Naganivetha; Joo, Ho Wan; Bae, Seongtae // Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p232513 

    Nanopatterned [Co/Pd] based pseudo spin-valves (PSV) with perpendicular anisotropy exhibited high magnetic and thermal stabilities suitable for 1 Gb magnetic random access memory applications. Magnetic force microscopy images clearly demonstrated that the nanopatterned [Co/Pd] based PSVs down to...

  • Switching dynamics and write endurance of magnetic tunnel junctions. Bauer, M.; Lopusnik, R.; Fassbender, J.; Hillebrands, B.; Bangert, J.; Wecker, J. // Journal of Applied Physics;1/1/2002, Vol. 91 Issue 1, p543 

    The switching dynamics of magnetic tunnel junctions has been studied by means of time resolved magneto-optic Kerr magnetometry. Magnetic field pulses as short as 250 ps are found to be sufficiently long to switch the storage content of the element. In order to test the write endurance the...

  • Self-formation of sub-60-nm half-pitch gratings with large areas through fracturing. Pease III, Leonard F.; Deshpande, Paru; Ying Wang; Russel, William B.; Chou, Stephen Y. // Nature Nanotechnology;Sep2007, Vol. 2 Issue 9, p545 

    Periodic micro- and nanostructures (gratings) have many significant applications in electronic, optical, magnetic, chemical and biological devices and materials. Traditional methods for fabricating gratings by writing with electrons, ions or a mechanical tip are limited to very small areas and...

  • In-plane anisotropy of coercive field in permalloy square ring arrays. Goncharov, A. V.; Zhukov, A. A.; Metlushko, V. V.; Bordignon, G.; Fangohr, H.; Karapetrov, G.; Ilic, B.; de Groot, P. A. J. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08Q508 

    Magnetic ring arrays are promising candidates for application in magnetic random access memory devices. The magnetic reversal processes and anisotropy of the coercivity in arrays of square-shaped nanorings with different spacings were investigated by vector magneto-optical Kerr effect...

  • Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory. Rizzo, N. D.; DeHerrera, M.; Janesky, J.; Engel, B.; Slaughter, J.; Tehrani, S. // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2335 

    We have measured thermally activated magnetization reversal of the free layers in submicron magnetic tunnel junctions to be used for magnetoresistive random access memory. We applied magnetic field pulses to the bits with a pulse duration t[sub p] ranging from nanoseconds to 0.1 ms. We have...

  • Precessional switching of the magnetization in microscopic magnetic tunnel junctions (invited). Schumacher, H. W.; Chappert, C.; Sousa, R. C.; Freitas, P. P.; Miltat, J.; Ferré, J. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7290 

    We study the precessional switching of the magnetization in a microscopic magnetic tunnel junction cell as used in magnetic random access memories. By measuring the tunneling magnetoresistance versus time we follow the dynamical response of the cell's free layer magnetization to ultrashort field...

  • Size dependence of switching current and energy barrier in the magnetization reversal of rectangular magnetic random access memory cell. Nozaki, Y.; Matsuyama, K. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7295 

    Write operation in magnetic random access memory (MRAM) with bit density of Gbit/cm[SUP2] order has been numerically simulated for low submicron scale magnetic cells. The amplitude of both the switching current I[SUBw] and the energy barrier ΔE of the magnetic cell show strong dependence on...

  • Increased efficiency and accuracy in micromagnetic calculations of switching astroids. Scheinfein, M. R.; Arrott, A. S. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p6802 

    The ''path method'' is introduced to use results of one or a few full Landau-Lifshitz--Gilbert dynamical micromagnetic calculations to predict switching diagrams for magnetic elements in random access memories. The utility of the method is demonstrated for an element in the form of a...

  • Effect of spatially asymmetric dipolar interactions in the magnetization reversal of closely spaced ferromagnetic nanoisland arrays. Porro, J. M.; Berger, A.; Grimsditch, M.; Metlushko, V.; Ilic, B.; Vavassori, P. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07B913 

    The magnetization reversal process of interacting elongated nanoislands is presented here. The magnetization reversal has been investigated by means of magneto-optical Kerr effect magnetometry, analyzing the beams reflected and diffracted by the array, magnetic force microscopy, and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics