TITLE

Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition

AUTHOR(S)
Zhang, X. B.; Ryou, J. H.; Dupuis, R. D.; Walter, G.; Holonyak, N.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p233105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe the growth of InP quantum structures on In0.5Al0.5P lattice-matched matrices deposited on (001) GaAs substrates using metalorganic chemical vapor deposition. We find that the deposited InP initially forms quantum wires, about 50 nm in width and a few nanometers in height. Further deposition of InP leads to the formation of quantum dots (QDs) on top of these wires. By varying the matrix growth conditions, the morphology of the InP quantum structures can be tuned. We demonstrate that the density of the wires and the QDs can be tuned by controlling the diffusion kinetics, i.e., changing the growth rate or growth temperature, during the growth of the In0.5Al0.5P matrix. Linear chains of self-assembled InP QDs can be achieved using optimized matrix layers.
ACCESSION #
17328455

 

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