Admittance spectroscopy for phosphorus-doped n-type diamond epilayer

Koide, Yasuo; Koizumi, S.; Kanda, H.; Suzuki, M.; Yoshida, H.; Sakuma, N.; Ono, T.; Sakai, T.
June 2005
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p232105
Academic Journal
Capture and emission processes of electron at phosphorus (P) donor in a n-diamond epilayer are analyzed by admittance spectroscopy. Dependence of temperatures on capacitance and conductance-frequency curves is well explained by Shockley-Read-Hall statistics. Thermal ionization energy and capture cross section of P donor are evaluated to be 0.54±0.02 eV and (4.5±2.0)×10-17 cm2, respectively. Broadening of the conductance-frequency curve is observed, which is believed to be due to a large Debye tail of electron distribution at a depletion layer edge.


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