Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Özgür, &;#x00DC;.; Fu, Y.; Moon, Y. T.; Yun, F.; Morkoç, H.; Everitt, H. O.; Park, S. S.; Lee, K. Y.
June 2005
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p232106
Academic Journal
Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on TiN porous network templates formed by in situ thermal annealing of Ti in ammonia. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are longer than ever reported for GaN. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 µm thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction (XRD) (10...) peak decreases considerably with the use of TiN layer and with increasing in situ annealing time, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.


Related Articles

  • Pressure-dependent photoluminescence study of In[sub x]Ga[sub 1-x]N. Shan, W.; Song, J.J. // Applied Physics Letters;10/27/1997, Vol. 71 Issue 17, p2433 

    Presents the low temperature photoluminescence measurements of In[sub x]Ga[sub 1-x]N films with applied pressures up to 50 kilobar. Growth of the films on thick gallium nitride layers by metalorganic chemical vapor deposition; Use of the diamond-anvil-cell technique; Pressure coefficient values...

  • Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition. Shan, W.; Xie, X.C. // Applied Physics Letters;10/23/1995, Vol. 67 Issue 17, p2512 

    Reports the study results on exciton radiative decay in single-crystal gallium nitride films grown by metalorganic chemical vapor deposition. Measurement of the time-resolved photoluminescence; Features of the well-resolved near-band-edge luminescence; Role of nonradiative recombination...

  • Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition. Cho, Hyung Koun; Lee, Jeong Yong; Kim, Ki Soo; Yang, Gye Mo; Song, Jae Ho; Yu, Phil Won // Journal of Applied Physics;3/1/2001, Vol. 89 Issue 5, p2617 

    We have studied the effect of the trimethylgallium (TMGa) flow rate in the GaN buffer layer on the optical and structural quality. From low temperature photoluminescence measurements, a GaN overlayer grown on a buffer layer with the TMGa flow rate of 80 μmol/min shows the intense...

  • Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire.... Chien-Jen Sun; Manijeh Razeghi // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p973 

    Compares the physical properties of gallium nitride thin films grown on two sapphire substrate orientations by metalorganic chemical vapor deposition. Crystallinity of the deposited films; Indication of the lower air carrier concentration and mobilities in the (0112) substrate; Evaluation of...

  • Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H-SiC and... Koynov, S.; Topf, M.; Fischer, S.; Meyer, B. K.; Radojkovic, P.; Hartmann, E.; Liliental-Weber, Z. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1890 

    Examines GaN films grown on 6H-SiC and Al2O3 substrates using low-pressure chemical vapor deposition with GaCl3 and NH3 as precursors. Optical, scanning tunneling and transmission electron microscopy results; Growth conditions; Determination of the overall shape and average diameter of...

  • Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films. Heying, B.; Wu, X.H. // Applied Physics Letters;1/29/1996, Vol. 68 Issue 5, p643 

    Investigates the effect of threading dislocation geometry on the x-ray diffraction peak widths of epitaxial gallium nitride (GaN) films. Use of metalorganic chemical vapor deposition for growing GaN films; Impact of dislocation density on optoelectronic film efficiency; Measurement of...

  • Deposition of high quality wurtzite GaN films over cubic (111) MgAl[sub 2]O[sub 4] substrates.... Sun, C.J.; Yang, J.W. // Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1129 

    Reports the reaction of single-crystal wurtzite GaN over cubic spinel (111) substrates during chemical vapor deposition. Employment of pulsed photoluminescence to demonstrate optical film quality; Determination of optical film quality through electron mobility; Formation of cleavage essential...

  • Development of a low-temperature GaN chemical vapor deposition process based on a single... McMurran, Jeff; Kouvetakis, J.; Smith, David J. // Applied Physics Letters;2/8/1999, Vol. 74 Issue 6, p883 

    Examines a chemical vapor deposition approach to growing gallium nitride thin films at low temperature using a singular molecular source. Precursors of growth; Decomposition pathway of stoichiometric elimination of H[sub 2] and N[sub 2]; Gas phase structure of the molecular source; Deposition...

  • Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. Martínez-Criado, G.; Cros, A.; Cantarero, A.; Dimitrov, R.; Ambacher, O.; Stutzmann, M. // Journal of Applied Physics;9/15/2000, Vol. 88 Issue 6, p3470 

    Presents the results of scanning electron microscopy, micro-Raman spectroscopy and photoluminescence measurements on magnesium-doped GaN films grown by metalorganic chemical vapor phase deposition. Surface morphology; Optical characterization; Excitation photon energy dependence; Temperature...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics