Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands

Uchino, T.; Bourdakos, K. N.; de Groot, C. H.; Ashburn, P.; Kiziroglou, M. E.; Dilliway, G. D.; Smith, D. C.
June 2005
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p233110
Academic Journal
A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.


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