General model and segregation coefficient measurement for ultrashallow doping by excimer laser annealing

Gillet, Jean-Numa; Degorce, Jean-Yves; Meunier, Michel
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222104
Academic Journal
A general model of ultrashallow doping by excimer laser annealing is derived from only one diffusion-segregation equation. In our model, the relative dopant profile after some laser shots reaches a stationary distribution, which only depends on the segregation and liquid-phase diffusion coefficients of the dopant but not on the laser-process parameters. From this result, a one-point method is proposed to experimentally determine the out-of-equilibrium segregation coefficient k. Only the relative dopant concentration at the material surface has to be measured prior to determine the k value. Experimental dopant profiles are compared to simulations generated with experimental k values.


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