TITLE

Zero-field spin splitting in modulation-doped AlxGa1-xN/GaN two-dimensional electron systems

AUTHOR(S)
Cho, K. S.; Tsai-Yu Huang; Hong-Syuan Wang; Ming-Gu Lin; Tse-Ming Chen; Liang, C.-T.; Chen, Y. F.; Ikai Lo
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-temperature magnetotransport measurements were performed on AlxGa1-xN/GaN two-dimensional electron systems. By studying the beating pattern in the Shubnikov–de Haas oscillations in a perpendicular magnetic field, we are able to measure the zero-field spin-splitting energies in our systems. Our experimental results demonstrate that the Rashba term due to structural inversion asymmetry is the dominant mechanism which gives rise to the measured zero-field spin splitting in our wurzite AlGaN/GaN structures. By utilizing the persistent photoconductivity (PPC) effect, we are able to increase the carrier density n in our AlGaN/GaN two-dimensional electron system. It is found that the Rashba spin-orbit splitting parameter α decreases with increasing n. We suggest that the formation of long-lived electron-hole pairs induced by the PPC effect decreases the large electric field near the AlGaN/GaN interface, causing α to decrease with increasing n.
ACCESSION #
17249979

 

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