Electroluminescence from metal/oxide/strained-Si tunneling diodes

Liao, M. H.; Chen, M.-J.; Chen, T. C.; Wang, P.-L.; Liu, C. W.
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223502
Academic Journal
The metal-oxide-silicon light-emitting diode under biaxial tensile mechanical strain is studied. The emission line shape of the device can be fitted by the electron-hole-plasma recombination model. The energy gap of strained Si extracted by the light emission spectra at the temperature of 120 K is reduced by 15 meV under 0.13% biaxial tensile strain. The light intensity of the device under 0.13% biaxial tensile strain increases 9% as compared to the relaxed-Si device. The upshift of valence band edge under mechanical strain to increase the majority hole concentration at the oxide/Si interface may be responsible for this light emission enhancement. The mechanical strain is measured by Raman spectroscopy, strain gauge, and analyzed by the finite element method.


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