TITLE

Electroluminescence from metal/oxide/strained-Si tunneling diodes

AUTHOR(S)
Liao, M. H.; Chen, M.-J.; Chen, T. C.; Wang, P.-L.; Liu, C. W.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The metal-oxide-silicon light-emitting diode under biaxial tensile mechanical strain is studied. The emission line shape of the device can be fitted by the electron-hole-plasma recombination model. The energy gap of strained Si extracted by the light emission spectra at the temperature of 120 K is reduced by 15 meV under 0.13% biaxial tensile strain. The light intensity of the device under 0.13% biaxial tensile strain increases 9% as compared to the relaxed-Si device. The upshift of valence band edge under mechanical strain to increase the majority hole concentration at the oxide/Si interface may be responsible for this light emission enhancement. The mechanical strain is measured by Raman spectroscopy, strain gauge, and analyzed by the finite element method.
ACCESSION #
17249970

 

Related Articles

  • Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment. Nazarov, A. N.; Skorupa, W.; Vovk, Ja. N.; Osiyuk, I. N.; Tkachenko, A. S.; Tyagulskii, I. P.; Lysenko, V. S.; Gebel, T.; Rebohle, L.; Yankov, R. A.; Nazarova, T. M. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 1, p90 

    We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device...

  • Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes. Senawiratne, J.; Li, Y.; Zhu, M.; Xia, Y.; Zhao, W.; Detchprohm, T.; Chatterjee, A.; Plawsky, J. L.; Wetzel, C. // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p607 

    We present a junction temperature analysis of GaInN/GaN quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro-Raman spectroscopy. The temperature was measured up to a drive current of 250 mA (357 A/cm²). We find better cooling efficiency in dies...

  • Light emission from nanocrystalline Si thin-film light emitting diodes due to tunneling carrier injection. Toyama, Toshihiko; Kotani, Yoshihiro; Okamoto, Hiroaki; Kida, Hirotsugu // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    Electroluminescence (EL) from nanocrystalline Si (nc-Si) has been studied by using thin-film light emitting diodes with a structure of glass/SnO[sub 2]/p-type nc-Si/Al. When positive bias voltages are applied on the SnO[sub 2] electrode, light emission from the nc-Si occurs with a peak energy of...

  • Stable and efficient electroluminescence from a porous silicon-based bipolar device. Tsybeskov, L.; Duttagupta, S.P. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p23 

    Demonstrates the development of a complete process compatible with conventional silicon (Si) technology in order to produce a bipolar light-emitting device. Dependence of the properties of electroluminescence (EL) on the annealing conditions; Detection of EL; Modulation of the maximum EL intensity.

  • Electroluminescence at Si band gap energy based on metal-oxide-silicon structures. Lin, Ching-Fuh; Liu, C. W. // Journal of Applied Physics;6/15/2000, Vol. 87 Issue 12, p8793 

    Presents information on a study which observed room-temperature electroluminescence corresponding to silicon (Si) band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si. Efforts devoted to converting silicon to a light-emitting material; Method used in observing...

  • A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network. Yu, X.; Seifert, W.; Vyvenko, O. F.; Kittler, M.; Wilhelm, T.; Reiche, M. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p041108 

    This letter has demonstrated a light emitting diode (LED) with a pure 1.5 μm emission using a metal-oxide-silicon (MOS) tunneling structure based on dislocation network in direct silicon bond wafer. It is found that under negative gate bias, the electrons in the metal gate electrode tunnel...

  • Degradation mechanism beyond device self-heating in high power light-emitting diodes. Yung, K. C.; Liem, H.; Choy, H. S.; Lun, W. K. // Journal of Applied Physics;May2011, Vol. 109 Issue 9, p094509 

    A unique degradation property of high power InGaN/GaN multiple quantum well (MQW) white light-emitting diodes (LEDs) was identified. The LEDs were stressed under different forward-currents. The various ageing characteristics were analyzed for both the electrical response and electro-luminescence...

  • Full-solution-processed blue organic light emitting device based on a fluorescent 1,3,5-tristyrylbenzene stilbenoid small molecule. Coya, C.; de Andrés, A.; Zaldo, C.; Álvarez, A. L.; Arredondo, B.; Gómez, R.; Segura, J. L.; Seoane, C. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    A full-solution-processed blue organic light emitting diode display based on a small molecule built on a fluorescent stilbenoid core has been fabricated and characterized. The structure of the blue device is ITO/PEDOT:PSS/active layer/Al. The optical characterization of the...

  • Blue electroluminescence from porous silicon carbide. Mimura, Hidenori; Matsumoto, Takahiro; Kanemitsu, Yoshihiko // Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3350 

    Examines the fabrication of blue light emitting diodes (LED) using porous silicon carbide (SiC) as a luminescent layer. Formation of SiC on 6H-SiC substrate; Electroluminescence (EL) of porous SiC junction under forward direction; Significance of LED for the EL mechanism of porous Si LED.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics