Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Driemeier, C.; Bastos, K. P.; Miotti, L.; Baumvol, I. J. R.; Nguyen, N. V.; Sayan, S.; Krug, C.
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221911
Academic Journal
We have used nuclear reaction analyses and Rutherford backscattering spectrometry to investigate quantitatively the compositional stability of hafnium aluminate thin films deposited on Si(001) by atomic layer deposition using HfCl4/H2O and Al(CH3)3/H2O precursors. It was found that increasing Al/Hf deposition cycles ratio leads to increasing oxygen deficiency in the as-deposited films as well as to increasing metal losses (up to ∼15%) from the films after rapid thermal annealing at 1000 °C. Furthermore, isotopic substitution experiments, showed that incorporation of oxygen from the gas phase is eased in the cases where deposition conditions failed to supply enough oxygen to complete oxides stoichiometry.


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