Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique

Ishikawa, Mizue; Tanaka, Hidekazu; Kawai, Tomoji
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222504
Academic Journal
We report on the preparation of MnxFe3-xO4 (x=0, 0.1, or 0.5) epitaxial thin films using a pulsed-laser deposition technique. Conditions for modified film formation are discussed, in addition to their electrical and magnetic properties in relation to the potential development of room temperature spin electronics devices. The film with x=0.1 could be fabricated at a higher substrate temperature (600 °C) than the Fe3O4 thin film without Mn doping. The doped films exhibited low resistivity of about 7.0×10-3(x=0.1)–9.0×10-2(x=0.5) Ω cm at room temperature. Moreover, a spin polarization of the carrier of MnxFe3-xO4 (x=0, 0.1, or 0.5) films was confirmed at room temperature by examination of anomalous Hall coefficient measurements.


Related Articles

  • Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition. Beckers, L.; Sanchez, F.; Schubert, J.; Zander, W.; Buchal, Ch. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3337 

    Deals with a study which described the epitaxial growth of Y-doped SrZrO[sub3] films on magnesium oxide by pulsed laser deposition. Background to the study; Experimental procedures; Results and discussion.

  • Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition. Hidenori Hiramatsu; Hikaru Sato; Takayoshi Katase; Toshio Kamiya; Hideo Hosono // Applied Physics Letters;4/28/2014, Vol. 104 Issue 17, p1 

    We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray...

  • Chromium doping of epitaxial PbZr0.2Ti0.8O3 thin films. Feigl, L.; Pippel, E.; Pintilie, L.; Alexe, M.; Hesse, D. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p126103-1 

    Epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films were grown by pulsed laser deposition. PbZr0.2Ti0.8O3 was doped with Cr acting as acceptor ion. Microstructural characterization was performed by (high resolution) transmission electron microscopy. The voltage dependence of polarization,...

  • Epitaxial stabilization of ultra thin films of electron doped manganites. Middey, S.; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Yazici, D.; Maple, M. B.; Ryan, P. J.; Freeland, J. W.; Chakhalian, J. // Applied Physics Letters;5/19/2014, Vol. 104 Issue 20, p1 

    Ultra-thin films of the electron doped manganite La0.8Ce0.2MnO3 were grown in a layer-by-layer growth mode on SrTiO3 (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and...

  • Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films. Xiang, P.-H.; Asanuma, S.; Yamada, H.; Inoue, I. H.; Akoh, H.; Sawa, A. // Applied Physics Letters;7/19/2010, Vol. 97 Issue 3, p032114 

    We report an epitaxial growth and electronic transport properties of Ca-doped SmNiO3 (Sm1-xCaxNiO3, 0≤x≤0.1) thin films deposited on (001)-oriented LaAlO3 substrates by the pulsed laser deposition method. Due to strong electron correlations of the Sm1-xCaxNiO3 films, the Mott...

  • Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature. Cheng, Z. X.; Wang, X. L.; Dou, S. X.; Ozawa, K.; Kimura, H. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p222902 

    The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi3.25Sm0.75V0.02T2.98O12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated...

  • Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO[sub 2]. Kimura, H.; Fukumura, T.; Kawasaki, M.; Inaba, K.; Hasegawa, T.; Koinuma, H. // Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p94 

    Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO[sub 2], have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost...

  • A novel approach for doping impurity in thin film in sutu by dual-beam pulsed-laser deposition Ong, C.K.; Xu, S.Y.; Zhou, W.Z. // Review of Scientific Instruments;Oct98, Vol. 69 Issue 10, p3659 

    Presents an approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique. Importance of doping techniques in developing electronic materials and devices; Demonstration on the doping of thin films; Application of as-deposited films in the fabrication of...

  • Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application. Peng, Pinggang; Xie, Dan; Yang, Yi; Zang, Yongyuan; Gao, Xili; Zhou, Changjian; Feng, Tingting; Tian, He; Ren, Tianling; Zhang, Xiaozhong // Journal of Applied Physics;Apr2012, Vol. 111 Issue 8, p084501 

    In this paper, nonvolatile bipolar resistive memory effects were observed in nitrogen doped diamond-like carbon (DLC) thin films prepared by a pulsed laser deposition technique. It is observed that the fabricated Pt/Ti/DLC/Pt structure exhibits good memory performances with an ON/OFF ratio >10,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics