TITLE

An infrared probe of tunable dielectrics in metal-oxide-semiconductor structures

AUTHOR(S)
Li, Z. Q.; Wang, G. M.; Mikolaitis, K. J.; Moses, D.; Heeger, A. J.; Basov, D. N.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A composite metal-polymer electrode is designed to investigate electric-field-induced changes of the dielectric function of gate insulators in metal-oxide-semiconductor structures using infrared spectroscopy. We studied structures based on TiO2 dielectric insulator on doped silicon, a combination commonly used in field-effect transistors. It is shown that the voltage-induced changes of the dielectric constant in TiO2 originate from a modification of the lattice vibration modes of this compound.
ACCESSION #
17249928

 

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