Relaxation of induced polar state in relaxor PbMg1/3Nb2/3O3 thin films studied by piezoresponse force microscopy

Shvartsman, V. V.; Kholkin, A. L.; Tyunina, M.; Levoska, J.
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222907
Academic Journal
Polarization state in epitaxial thin films of relaxor ferroelectric PbMg1/3Nb2/3O3 (PMN) was experimentally studied at the nanoscale using a piezoresponse force microscopy (PFM). In the absence of a dc bias applied to the PFM tip, no piezoelectric activity could be found on most of the surface of the film. Under a moderate voltage (>1.5–2 V), a polar state with a nonzero piezoresponse could be induced. Longer poling resulted in a significant reduction of the initial piezoresponse. After removing the bias field, a long-term relaxation of the piezoelectric signal obeying a Kohlrausch-Williams-Watt dependence was observed.


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