TITLE

Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113)

AUTHOR(S)
Hanke, M.; Boeck, T.; Gerlitzke, A.-K.; Syrowatka, F.; Heyroth, F.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a dedicated two-step liquid phase epitaxy (LPE) experiment yielding ensembles of SiGe/Si(113) nanoscale islands with unidirectional ordering along the [110] direction. Initial homoepitaxy of silicon on a polished Si(113) wafer from an indium solution at 930 °C results in a highly regular pattern consisting of (111) and (116) facets. For the subsequent heteroepitaxy with SiGe the solvent has been exchanged for bismuth since it enables an LPE process at considerably lower temperatures around 590 We report on a dedicated two-step liquid phase epitaxy (LPE) experiment yielding ensembles of SiGe/Si(113) nanoscale islands with unidirectional ordering along the [110] direction. Initial homoepitaxy of silicon on a polished Si (113) wafer from an indium solution at 930 °C results in a highly regular pattern consisting of (111) and (116) facets. For the subsequent heteroepitaxy with SiGe the solvent has been exchanged for bismuth since it enables an LPE process at considerably lower temperatures around 590 °C, and thus preserves the initial template which strictly enforces the linear self-assembling of SiGe islands. However, with respect to the initial grooves the established island-island correlation length perpendicular to them has been increased by a factor of about 1.6 indicating that not every groove acts as a nucleation place. This can be explained by finite element calculations on the three-dimensional deformation field which proves energetically favorable nucleation sites in the island vicinity within and infavorable places in adjacent rows. °C, and thus preserves the initial template which strictly enforces the linear self-assembling of SiGe islands. However, with respect to the initial grooves the established island-island correlation length perpendicular to them has been increased by a factor of about 1.6 indicating that not every groove acts as a nucleation place. This can be explained by finite element calculations on the three-dimensional deformation field which proves energetically favorable nucleation sites in the island vicinity within and infavorable places in adjacent rows.
ACCESSION #
17249920

 

Related Articles

  • Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission. Sturm, J. C.; Garone, P. M.; Schwartz, P. V. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p542 

    Presents information on an application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. Absorption of the silicon-germanium alloy layers; Improvement...

  • Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface. Vanacore, Giovanni; Zani, Maurizio; Bollani, Monica; Colombo, Davide; Isella, Giovanni; Osmond, Johann; Sordan, Roman; Tagliaferri, Alberto // Nanoscale Research Letters;Dec2010, Vol. 5 Issue 12, p1921 

    The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source...

  • Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands. Brehm, M.; Grydlik, M.; Hackl, F.; Lausecker, E.; Fromherz, T.; Bauer, G. // Nanoscale Research Letters;Dec2010, Vol. 5 Issue 12, p1868 

    For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when compared to islands grown on patterned substrates side by side within the same run in a solid source molecular beam epitaxy chamber. We...

  • Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy. Menon, C.; Bentzen, A.; Radamson, H. H. // Journal of Applied Physics;11/1/2001, Vol. 90 Issue 9, p4805 

    The evolution of the loading effect in Si[sub 1-x]Ge[sub x] layers (0≤x≤20%) versus growth parameters has been investigated for selective and nonselective growth using silane- and dichlorosilane-based epitaxy. Various methods have been examined in order to reduce the loading effect,...

  • Ordered Arrays of SiGe Islands from Low-Energy PECVD. Bollani, M.; Bonera, E.; Chrastina, D.; Fedorov, A.; Montuori, V.; Picco, A.; Tagliaferri, A.; Vanacore, G.; Sordan, R. // Nanoscale Research Letters;Dec2010, Vol. 5 Issue 12, p1917 

    SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a wider range of...

  • Composition and growth direction control of epitaxial vapor-liquid-solid-grown SiGe nanowires. Dailey, Eric; Madras, Prashanth; Drucker, Jeff // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p143106 

    The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated...

  • Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)]. Yew, Tri-Rung; O, Kenneth; Reif, Rafael // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2061 

    Reprints a portion of the paper 'Silicon epitaxial growth on (100) patterned oxide wafers at 800 degrees centigrade by ultra-low pressure chemical vapor deposition,' published in a 1988 issue of 'Applied Physics Letters.' Deposition of the epitaxial layers; In situ argon sputter cleaning step;...

  • Liquid phase epitaxy centrifuge for 100 mm diameter Si substrates. Konuma, M.; Czech, E. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p205 

    Examines the novel centrifuge of liquid phase epitaxy for 100-millimeter diameter silicon (Si) wafers. Growth of epitaxial Si layers from indium solutions; Observation of smooth surfaces in the epitaxial Si layers; Use of Hall effect measurements and transmission electron microscope to confirm...

  • Determination of Individual Layer Composition and Thickness in Multilayer HgCdTe Structures. Daraselia, M.; Carmody, M.; Zandian, M.; Arias, J. M. // Journal of Electronic Materials;Jun2004, Vol. 33 Issue 6, p761 

    The reproducible molecular-beam epitaxy (MBE) growth of dual-band Hg1-xCdxTe (MCT) heterostructures requires routine post-growth wafer analysis for constituent layer thickness and alloy composition, therefore, demanding nondestructive characterization techniques that offer quick data feedback....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics