TITLE

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems

AUTHOR(S)
Sakai, Akira; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki; Yasuda, Yukio
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have grown strain-relaxed SiGe layers on Si(001) substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed.
ACCESSION #
17249919

 

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