Ultraviolet photovoltage characteristics of SrTiO3-δ/Si heterojunction

Kun Zhao; Yanhong Huang; Qingli Zhou; Kui-Juan Jin; Huibin Lu; Meng He; Bolin Cheng; Yueliang Zhou; Zhenghao Chen; Guozhen Yang
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221917
Academic Journal
A photovoltaic effect is observed in the heterostructure of p-Si/n-SrTiO3-δ (p: hole carrier type, n: electron carrier type). The current–voltage curve exhibits a good rectifying characteristic similar to that of the traditional diode. The junction shows the open circuit voltage of 126 mV/mJ, the short circuit current of 1.78 mA/mJ, and the response time faster than 10 ns for ultraviolet pulsed laser of 25 ns in duration at room temperature, suggesting the promising potential of this junction as a new type of ultrafast ultraviolet detectors with high sensitivity for application.


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