TITLE

Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate

AUTHOR(S)
Chao Sung Lai; Woei Cherng Wu; Jer Chyi Wang; Tien sheng Chao
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment was proposed to improve the electrical characterization. TaN–HfO2–p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra.
ACCESSION #
17249916

 

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