Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors

Chang Yong Kang; Lysaght, Pat; Choi, Rino; Byoung Hun Lee; Se Jong Rhee; Chang Hwan Choi; Akbar, M. S.; Lee, Jack C.
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222906
Academic Journal
This Letter reports the nickel-silicide phase effects on the electrical characteristics of high-k and silicon dioxide (SiO2) metal-oxide-semiconductor devices. It was found that the silicon-deficient nickel-silicided gate electrode on the hafnium silicon oxynitride (HfSiON) led to a positive flatband voltage (Vfb) shift and a reduction in the equivalent oxide thickness (EOT). However, negligible Vfb shift and EOT decrease were observed in the case of control hafnium oxide and SiO2 structures. It was believed that Si dissociation from the HfSiON layer was the main reason for the positive Vfb shift and the EOT decrease.


Related Articles

  • A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics. Gassilloud, R.; Maunoury, C.; Leroux, C.; Piallat, F.; Saidi, B.; Martin, F.; Maitrejean, S. // Applied Physics Letters;4/7/2014, Vol. 104 Issue 14, p1 

    We studied Ta, TaN, and sub-stoichiometric TaNx electrodes (obtained by nitrogen redistribution in Ta/TaN or Ti/TaN bilayers) deposited on thermal SiO2 and HfO2/IL (0.8 nm SiO2 IL, i.e., interlayer) stacks. Effective work-functions (WF) were extracted on MOS capacitor structures on SiO2 bevelled...

  • Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks. Samanta, Piyas; Cheng, Chin-Lung; Lee, Yao-Jen; Chan, Mansun // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p124507-1 

    A comparative study on charge carrier generation/trapping and related degradation in HfAlO/SiO2 and HfO2/SiO2 stacks with identical equivalent-oxide-thickness (EOT) is presented during constant gate voltage stress of n-type metal-oxide-semiconductor capacitors. Compared to HfO2 devices, HfAlO...

  • Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices. Avner Rothschild, Jonathan; Cohen, Aya; Brusilovsky, Anna; Kornblum, Lior; Kauffmann, Yaron; Amouyal, Yaron; Eizenberg, Moshe // Journal of Applied Physics;Jul2012, Vol. 112 Issue 1, p013717 

    Hf-Ni alloys are studied as a gate electrode for metal-oxide-semiconductor devices. The Hf-Ni solid-state amorphization couple encompasses several metallurgical phenomena which are investigated at the nanoscale and are correlated with the macroscopic electrical properties of devices. The...

  • Stress free and moisture insensitive silicon oxide dielectric films formed by molecular-beam deposition. Chand, Naresh; Kola, R. R.; Opila, R. L.; Comizzoli, R. B.; Krautter, H.; Sergent, A. M.; Tsang, W. T.; Osenbach, J. W.; Luftman, H. S. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3315 

    Presents a study that formed silicon oxide by molecular-beam deposition. Chemical properties of silicon oxide; Suitability of silicon oxide as a dielectric for many semiconductor device applications; Thermal evaporation of silicon oxide.

  • Dielectric effect induced by the barrier layers in Ni-doped KTaO3. Tsukada, Shinya; Hayashi, Taisuke; Ohba, Takuya; Akishige, Yukikuni // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p082902 

    A dielectric constant of over 100 000, with dielectric loss of less than 0.1, was found in 1.0 mol. % Ni-doped KTaO3 (KT:1%Ni) single crystals, showing temperature and frequency stabilities favorable for capacitor applications. The dielectric constant was found to depend on the electrode...

  • Improvement in the breakdown endurance of high- κ dielectric by utilizing stacking technology and adding sufficient interfacial layer. Pang, Chin-Sheng; Hwu, Jenn-Gwo // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO/SiO/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the...

  • Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices. Kang, Chang Seok; Onishi, Katsunori; Kang, Laegu; Lee, Jack C. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p5018 

    Effects of hafnium (Hf) contamination on the properties of n[sup +] -polycrystalline-Si/SiO[sub 2]/Si metaloxide-semiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages (V[sub fb]) and substrate doping concentrations (N[subA]) of the MOS...

  • Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics. Wen, H.-C.; Lysaght, P.; Alshareef, H. N.; Huffman, C.; Harris, H. R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B. H.; Campin, M. J.; Foran, B.; Lian, G. D.; Kwong, D.-L. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p043520 

    A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO2, Ru/HfO2, and...

  • Micro-Probe CV and IV Characterization of Thin Dielectric Films on Product-Wafer Scribe-Line Structures. Feng, A.; Souchkov, V. V.; Wong, T. M. H.; Faifer, V. N.; Current, M. I. // AIP Conference Proceedings;9/26/2007, Vol. 931 Issue 1, p255 

    A 50 μm metal probe has been combined with pattern recognition optics and a 3-directional precision stage for automated CV and IV testing of dielectric layers in scribe-line test structures on IC product wafers. Highly repeatable contact conditions are obtained though the use of a MEMS-based...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics