Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate

Vorona, I. P.; Mchedlidze, T.; Izadifard, M.; Buyanova, I. A.; Chen, W. M.; Hong, Y. G.; Xin, H. P.; Tu, C. W.
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p222110
Academic Journal
Dilute-nitride Ga0.44In0.56NyP1-y alloys with y=0–0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect.


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