Reverse-bias electroluminescence imaging to diagnose failures of vertical-cavity surface-emitting lasers

McElfresh, D. K.; Vacar, D.
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221108
Academic Journal
The charge flowing through the junction of vertical-cavity surface-emitting lasers (VCSELs) under reverse-bias gives rise to electroluminescence (EL) when breakdown conditions are satisfied. We collected the reverse-bias EL of VCSEL devices that had been subjected to accelerated stress. We observed distinctly different spatial distributions of the reverse-bias EL: for survivor (nondegraded) devices the breakdown current appears to be confined to one well-defined filament while for dark (degraded) VCSELs the reverse-bias EL pattern is a disordered network of filaments. We show that the line dislocation network that renders the VCSELs dark is directly imaged as the spatial distribution of the reverse-bias EL.


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