Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates

Hirashita, Norio; Sugiyama, Naoharu; Toyoda, Eiji; Takagi, Shin-ichi
May 2005
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221923
Academic Journal
Misfit defects in strained Si layers on silicon-germanium-on-insulator (SGOI) substrates were studied using transmission electron microscopy. With increasing strained-layer thickness, stacking faults with 90° Shockley partial dislocations at strained-Si–SiGe interfaces are found to be increasingly formed in the strained Si layers, extending from the surface to the interface. This fact indicates that generation and glide on {111} planes of the 90° partial dislocations are responsible for the relaxation of the cumulative tensile strain in strained Si layers on SGOI substrates.


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