TITLE

Demonstration of undoped quaternary AlInGaN/GaN heterostructure field-effect transistor on sapphire substrate

AUTHOR(S)
Liu, Y.; Jiang, H.; Arulkumaran, S.; Egawa, T.; Zhang, B.; Ishikawa, H.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Undoped AlInGaN/GaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mA/mm and extrinsic transconductance of 123 mS/mm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaN/GaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaN/GaN HFET structure showed relatively low Hall mobility (689 cm2/V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaN/GaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.
ACCESSION #
17249900

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics