TITLE

Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

AUTHOR(S)
Founta, S.; Rol, F.; Bellet-Amalric, E.; Bleuse, J.; Daudin, B.; Gayral, B.; Mariette, H.; Moisson, C.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p171901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on nonpolar GaN quantum dots embedded in AlN, grown on (11-20) 6H–SiC by plasma-assisted molecular-beam epitaxy. These dots are aligned in the growth plane and present a constant aspect ratio of 10. Their optical properties were studied as a function of GaN coverage. Especially, the variation of their emission energy as compared to that of (0001) GaN quantum dots is a clear fingerprint of the reduced internal electric field present in these nonpolar nanostructures. Time-resolved spectroscopy confirmed this result by revealing lifetimes in the few 100 ps range in contrast to the much longer ones obtained for the (0001) GaN quantum dots.
ACCESSION #
17227622

 

Related Articles

  • A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum. Davydov, S. Yu.; Lebedev, A. A.; Savkina, N. S.; Syvajarvi, M.; Yakimova, R. // Semiconductors;Feb2004, Vol. 38 Issue 2, p150 

    The temperature dependence of the growth rate of epitaxial layers of silicon carbide in vacuum was calculated within the simple model based on the Hertz–Knudsen equation, taking into account the temperature-dependent sticking coefficient. The calculation results fit the experimental data...

  • Spatial Diffusion Of Carriers In A Quantum Dot System Grown By Shadow Mask Controlled Epitaxy. Mackowski, S.; Gurung, T.; Haque, F.; Jackson, H. E.; Smith, L. M.; Schallenberg, T.; Brunner, K.; Molenkamp, L. W. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p657 

    We report on the optical properties of a quantum dot (QD) structure grown by shadow mask-controlled epitaxy. In this method the dots are grown in a number of very small islands spaced by 1 micron from each other and connected through a uniform 800 nm-wide wire-like barrier. We find that if...

  • Basal plane dislocation-free epitaxy of silicon carbide. Zhang, Z.; Sudarshan, T. S. // Applied Physics Letters;10/10/2005, Vol. 87 Issue 15, p151913 

    Molten KOH etching was implemented on SiC substrates before growing epilayers on them. It was found that the creation of basal plane dislocation (BPD) etch pits on the substrates can greatly enhance the conversion of BPDs to threading edge dislocations during epitaxy, and thus low BPD density...

  • Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy. Maronchuk, I. E.; D'yachenko, A. M.; Minailov, A. I.; Kurak, V. V.; Chorny, I. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2004, Vol. 7 Issue 4, p363 

    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good...

  • Time Variation of the Mean Quantum Dot Size at the Kinetic Growth Stage. Dubrovskii, V. G.; Sibirev, N. V. // Technical Physics Letters;Feb2005, Vol. 31 Issue 2, p161 

    The process of quantum dot (QD) formation in heteroepitaxial systems with lattice mismatch has been studied using theoretical and numerical methods. An analytical solution is obtained that describes time variation of the mean QD size at the kinetic growth stage. � 2005 Pleiades Publishing, Inc.

  • Complex Nanostructures by Pulsed Droplet Epitaxy. Sanguinetti, Stefano; Somaschini, Claudio; Bietti, Sergio; Koguchi, Noboyuki // Nanomaterials & Nanotechnology;2011, Vol. 1 Issue 1, p14 

    What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and...

  • Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots. Gogneau, N.; Fossard, F.; Monroy, E.; Monnoye, S.; Mank, H.; Daudin, B. // Applied Physics Letters;5/24/2004, Vol. 84 Issue 21, p4224 

    We report on the effect of vertical correlation on GaN/AlN quantum dots grown by plasma-assisted molecular-beam epitaxy using the modified Stranski–Krastanow growth mode. When increasing the number of GaN periods, we observe a homogenization of the island distribution and a redshift of...

  • Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K. Holub, M.; Chakrabarti, S.; Fathpour, S.; Bhattacharya, P.; Lei, Y.; Ghosh, S. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p973 

    The magnetic and structural properties of InAs:Mn self-organized diluted magnetic quantum dots grown by low-temperature (∼270 °C), solid-source molecular-beam epitaxy using a very low InAs growth rate (<0.1 ML/s) are investigated. A Curie temperature (TC) of ∼350 K is measured in a...

  • Dimensional structural transition in CdTe/CdxZn1-xTe nanostructures. Lee, H. S.; Park, H. L.; Kim, T. W. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5598 

    CdTe nanostructures were grown on CdxZn1-xTe buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics