Characteristics of unannealed ZnMgO/ZnO p-n junctions on bulk (100) ZnO substrates

Hyucksoo Yang; Y. Li; Norton, D. P.; Pearton, S. J.; Jung, Soohwan; Ren, F.; Boatner, L. A.
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p172103
Academic Journal
Zn0.9Mg0.1O/ZnO p-n junctions were grown by pulsed laser deposition at ≤500 °C on bulk n-type, (100), nonpolar, a-plane ZnO substrates. No postgrowth annealing was performed, with the P-doped ZnMgO showing p-type conductivity (hole density ∼1016 cm-3, mobility ∼6 cm2 V-1 s-1) in the as-grown state. Front-to-back p-n junctions were fabricated with Ni/Au used as the p-Ohmic contact and Ti/Au as the backside n-Ohmic contact. The p contacts showed improved characteristics after annealing up to 400 °C, but the n contacts were Ohmic as deposited. The junctions showed rectifying behavior up to 200 °C. The forward turn-on voltage was ∼6.5 V at 25 °C. The simple, low-temperature growth and processing sequence show the promise of ZnO for applications in transparent electronics and UV light emitters.


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