Characteristics of unannealed ZnMgO/ZnO p-n junctions on bulk (100) ZnO substrates

Hyucksoo Yang; Y. Li; Norton, D. P.; Pearton, S. J.; Jung, Soohwan; Ren, F.; Boatner, L. A.
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p172103
Academic Journal
Zn0.9Mg0.1O/ZnO p-n junctions were grown by pulsed laser deposition at ≤500 °C on bulk n-type, (100), nonpolar, a-plane ZnO substrates. No postgrowth annealing was performed, with the P-doped ZnMgO showing p-type conductivity (hole density ∼1016 cm-3, mobility ∼6 cm2 V-1 s-1) in the as-grown state. Front-to-back p-n junctions were fabricated with Ni/Au used as the p-Ohmic contact and Ti/Au as the backside n-Ohmic contact. The p contacts showed improved characteristics after annealing up to 400 °C, but the n contacts were Ohmic as deposited. The junctions showed rectifying behavior up to 200 °C. The forward turn-on voltage was ∼6.5 V at 25 °C. The simple, low-temperature growth and processing sequence show the promise of ZnO for applications in transparent electronics and UV light emitters.


Related Articles

  • Radiation Damage Formation And Annealing In Mg-Implanted GaN. Whelan, Sean; Kelly, Michael J.; Yan, John; Gwilliam, Russell // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p249 

    We have implanted GaN with Mg ions over an energy range of 200keV to 1MeV at substrate temperatures of -150 (cold) and +300°C (hot). The radiation damage formation in GaN was increased for cold implants when compared to samples implanted at elevated temperatures. The increase in damage...

  • Linear electric molten zone in semiconductors. Vallêra, António M.; Maia Alves, Jorge; Serra, João M.; Brito, Miguel C.; Gamboa, Roberto M. // Applied Physics Letters;6/4/2007, Vol. 90 Issue 23, p232111 

    This letter describes how the temperature dependence of the electrical conductivity in semiconductors may be used to produce a linear floating molten zone which is intrinsically stable and uniform along its length. An analytical model and an experimental demonstration of such electric molten...

  • Stability of the Modulated Structure of Baıkal Lazurite and Its Recrystallization at a Temperature of 600°C over a Wide Range of Sulfur Dioxide Fugacities. Tauson, V. L.; Sapozhnikov, A. N. // Crystallography Reports;Dec2005, Vol. 50 Issue 7, pS1 

    The stability of three-dimensional incommensurate modulation in cubic lazurite from the Baıkal region is experimentally investigated at T = 600°C. It is found that the X-ray photoelectron spectra of the annealed samples exhibit a peak corresponding to sulfite and a split peak associated...

  • Combined process for production of base oils and exhaustively deoiled waxes. Use of oscillating crystallizers. Yakovlev, S.; Zakharov, V.; Boldinov, V.; Esipko, E.; Frolov, A.; Voidashevich, V. // Chemistry & Technology of Fuels & Oils;Mar2006, Vol. 42 Issue 2, p90 

    The analysis of the results obtained suggests the following conclusions: a process for fabricating lube oils and exhaustively deoiled waxes using recrystallization of dewaxing stage-two slack wax in an oscillating crystallizer was developed. The possibility of stable manufacture of wax with an...

  • Effect of Scandium on the Structure and Properties of Aluminum Alloys. Zakharov, V. V. // Metal Science & Heat Treatment;Jul/Aug2003, Vol. 45 Issue 7/8, p246 

    It is shown that the addition of scandium considerably influences the structure and properties of aluminum and its alloys. Scandium is the strongest inoculant of the cast grain structure of aluminum alloys, the strongest suppressor of recrystallization, and the strongest hardener (per 0.1% of...

  • Effects of Isothermal Heat Treatment on Microstructural Evolution of Semisolid Al-4Cu-Mg Alloy. Jiang Haitao; Li Miaoquan // Journal of Materials Engineering & Performance;Aug2004, Vol. 13 Issue 4, p488 

    The authors investigated the effects of the isothermal heat-treatment conditions on the microstructural evolution and composition distribution of semisolid Al-4Cu-Mg alloy during isothermal heat treatment. The experimental results show that the microstructural evolution and composition...

  • 1.55 μm GaNAsSb photodetector on GaAs. Luo, H.; Gupta, J. A.; Liu, H. C. // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211121 

    We report a GaNAsSb p-i-n photodetector operating in the 1.55-μm-wavelength region. The device consists of two undoped 70-Å GaN0.025As0.615Sb0.36 quantum wells sandwiched between p- and n- GaAs barriers grown by molecular-beam epitaxy on GaAs substrate. At 1.55 μm, responsivities of...

  • Effect of Precipitates on the Development of P Orientation {011} $$ \left\langle {566} \right\rangle $$ in a Recrystallized Continuous Cast AA 3004 Aluminum Alloy after Cold Rolling. Zeng, Q.; Wen, X.; Zhai, T. // Metallurgical & Materials Transactions. Part A;Oct2009, Vol. 40 Issue 10, p2488 

    The as-received hot band (2.54-mm thick) of a continuous cast (CC) AA 3004 Al alloy was cold rolled at reductions, ranging from 25 to 90 pct, and subsequently annealed at 510 °C for 4 hours. Some of these specimens had been annealed at 420 °C for 3 hours with a heating rate of 1 °C/min...

  • The Evolution of Microstructure and Mechanical Properties of Al-Mn-Fe-Si Alloys During Isothermal Annealing. POKOVÁ, M.; ZIMINA, M.; CIESLAR, M. // Acta Physica Polonica, A.;2015, Vol. 128 Issue 4, p746 

    Recrystallization during isothermal annealing is studied in a twin-roll cast Al-Mn-Fe-Si alloy with Zr addition. Al3Zr precipitates, which are known to improve the recrystallization resistance by exerting the Zener drag on migrating grain boundaries, form during heat treatment at 450°C....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics