Passivation of InAs/(GaIn)Sb short-period superlattice photodiodes with 10 μm cutoff wavelength by epitaxial overgrowth with AlxGa1-xAsySb1-y

Rehm, Robert; Walther, Martin; Fuchs, Frank; Schmitz, Johannes; Fleissner, Joachim
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173501
Academic Journal
An approach for the passivation of photodiodes based on compounds of the InAs/GaSb/AlSb materials family is presented. The passivation is realized by the overgrowth of patterned mesa devices with a quaternary AlxGa1-xAsySb1-y layer, lattice matched to the GaSb substrate. Proof of concept is demonstrated on infrared photodiodes based on InAs/(GaIn)Sb superlattices with 10 μm cutoff wavelength operating at 77 K where suppression of surface leakage currents is observed.


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