Self-heating study of an AlGaN/GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Ahmad, I.; Kasisomayajula, V.; Holtz, M.; Berg, J. M.; Kurtz, S. R.; Tigges, C. P.; Allerman, A. A.; Baca, A. G.
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173503
Academic Journal
We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistor using below (visible 488.0 nm) and near (UV 363.8 nm) GaN band-gap excitation. The shallow penetration depth of the UV light allows us to measure temperature rise (ΔT) in the two-dimensional electron gas (2DEG) region of the device between drain and source. Visible light gives the average ΔT in the GaN layer, and that of the SiC substrate, at the same lateral position. Combined, we depth profile the self-heating. Measured ΔT in the 2DEG is consistently over twice the average GaN-layer value. Electrical and thermal transport properties are simulated. We identify a hotspot, located at the gate edge in the 2DEG, as the prevailing factor in the self-heating.


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