Improved visible photoluminescence from porous silicon with surface Si–Ag bonds

Sun, J.; Lu, Y. W.; Du, X. W.; Kulinich, S. A.
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p171905
Academic Journal
Porous silicon with surface Si–Ag bonds was prepared by a two-step method combining chemical etching and electrochemical anodization. The microstructure was analyzed by scanning electron microscopy, and the bond structure was evaluated by energy dispersion spectroscopy and Fourier transform infrared spectroscopy. The material prepared by this technique gives strong photoluminescence with improved photostability. The improvements in properties are attributed to the existence of the surface Si–Ag bonds, which are more stable compared to Si–H bonds usually observed in convenient porous silicon fabricated by electrochemical anodization.


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