Surface preparation of Si(001) substrate using low-pH HF solution

Morita, Yukinori; Nishizawa, Masayasu
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p171907
Academic Journal
We prepared atomically flat Si(001) surfaces that have well-ordered step-and-terrace structures using a low-pH (pH<1) HF solution (LPH) and subsequent low-temperature (750° C) annealing in H2. The flattening was attributed to the enhanced migration of Si atoms on the LPH-treated surface because anisotropic etching is suppressed by the low concentration of OH ions. The reduction in the H2 annealing temperature to below the decomposition temperature of Si oxide enabled us to form an atomically flat Si(001) surface in a window area surrounded by a thick device isolation oxide.


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