Noise properties of the Bloch oscillating transistor

Lindell, René; Hakonen, Pertti
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173507
Academic Journal
We have measured the current noise spectral density of the Bloch oscillating transistor as a function of current gain. We find, as expected from theory and simulations, that the equivalent input noise that shows up in the output is less than the shot noise of the normal-insulating-superconductor tunnel junction (base junction). At the optimal operating point we find a reduced input current noise of 1.0 fA/√Hz and a corresponding noise temperature of 0.4 K. The differential current gain at the same joint is as large as 30 and the power gain amounts to 35.


Related Articles

  • Geometry Dependence of 1/f Noise in n- and p-channel MuGFETs. Subramanian, V.; Mercha, A.; Dixit, A.; Anil, K. G.; Jurczak, M.; De Meyer, K.; Decoutere, S.; Maes, H.; Groeseneken, G.; Sansen, W. // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p279 

    Geometry dependence of 1/f noise in n- and p-channel MuGFETs is investigated for length, width and fin arrays. Based on the geometry and bias dependence of normalized drain current noise spectral density (SID/ID2) and input referred noise (SVG) at low drain bias (VD=50mV), conclusions are made...

  • Temperature Dependant Bundle Size in YBaCuO Thin Film. HAFID, Abdelhalim; TAOUFIK, Ahmed; El hamidi, Habiba; BOUAADDI, Abella; LMOUDEN, Brahim; Elouadi, Hassan; Tirbiyine, Ahmed; BGHOUR, Mustapha // International Journal of Computer Applications;10/1/2012, Vol. 55, p31 

    In this article we intend to analyze the spectral density Sv(0) at frequency zero, and bundle size in a type II superconductors , This spectral noise density is determined from experimental results , In continuation one will study the variations of the bundle size according to the temperature of...

  • Effects of oxygen-related traps in silicon on the generation-recombination noise. Jiménez Tejada, J. A.; López Villanueva, J. A.; Godoy, A.; Carceller, J. E.; Gómez-Campos, F. M.; Rodríguez-Bolívar, S. // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p717 

    This work shows the effects of oxygen related traps in silicon on the generation-recombination noise and presents a procedure to determine their capture cross-sections and densities. It compares the current noise spectral density measured in p - n junctions fabricated on Czochralski-grown...

  • Noise maximum at trap-filling transition in polyacenes. Tizzoni, M.; Carbone, A.; Pennetta, C.; Reggiani, L. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p109 

    We consider a trapping—detrapping noise model to explain the recently observed maximum in the spectral density of current fluctuations in organic semiconductors (tetracene, pentacene), under space-charge-limited-current conditions. The ratio u = nt/Nt of filled to total traps is obtained...

  • Note: Updates to an ultra-low noise laser current driver. Troxel, Daylin L.; Erickson, Christopher J.; Durfee, Dallin S. // Review of Scientific Instruments;Sep2011, Vol. 82 Issue 9, p096101 

    We describe updates to our current driver design allowing for higher output currents, both positive and negative currents, and updated digital interfacing to the microcontroller. We also discuss measurement of the noise spectral density of the driver with a better technique, showing that the...

  • High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Simoen, E.; Mercha, A.; Rafí, J. M.; Ciaeys, C.; Lukyanchikova, N. B.; Smolanka, A. M.; Garbar, N. // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p4084 

    This article describes the impact of a high-energy proton irradiation on the parameters of the Lorentzian noise overshoot, occurring in ultrathin gate oxide 0.10 μm partially depleted (PD) silicon-on-insulator metal-oxide-semiconductor field-effect transistors (MOSFETs), operated in the...

  • El Kink en la Espectroscopíia de Fotoemisión de Ángulo Resuelto (ARPES) para el BI2212 Óptimamente Dopado. Ruiz, H. S.; Giraldo, J. J.; Baquero, R. // Revista Colombiana de Física;2009, Vol. 41 Issue 2, p271 

    Differing of the transport and quasiparticle properties, three different spectral densities are used in the reproduction of bosonic renormalization effect observed from ARPES in a sample of Bi2Sr2CaCu2O8+δ optimally doped (Bi2212) as an extension to obtained results for Pb.

  • Spectral Density and Density of States in a Superconductor in an Exactly Solvable Model of a Pseudogap State. Kuchinskiı, É. Z. // Physics of the Solid State;Jun2003, Vol. 45 Issue 6, p1017 

    A simple, exactly solvable model of a pseudogap state induced by fluctuations of dielectric short-range order is used to study the peculiarities of the electronic spectral density and density of states of a superconductor in the model of the Fermi surface with hot patches. The problem is...

  • Low Frequency Noise In Electrolyte-Gate Field-Effect Devices Functionalized With Dendrimer/Carbon-Nanotube Multilayers. Gasparyan, F. V.; Poghossian, A.; Vitusevich, S. A.; Petrychuk, M. V.; Sydoruk, V. A.; Surmalyan, A. V.; Siqueira, J. R.; Oliveira Jr., O. N.; Offenhäusser, A.; Schöning, M. J. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p133 

    Low-frequency noise in an electrolyte-insulator-semiconductor (EIS) structure functionalized with a multilayer of polyamidoamine (PAMAM) dendrimer and single-walled carbon nanotubes (SWNT) is studied. The noise spectral density exhibits 1/fγ dependence with an exponential slope of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics