TITLE

Large open-circuit voltage improvement by rapid thermal annealing of evaporated solid-phase-crystallized thin-film silicon solar cells on glass

AUTHOR(S)
Terry, Mason L.; Straub, Axel; Inns, Daniel; Song, Dengyuan; Aberle, Armin G.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p172108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we investigate the impact of rapid thermal annealing (RTA) on thin-film polycrystalline silicon (pc-Si) solar cells on glass made by evaporation of amorphous silicon (a-Si) and subsequent solid-phase crystallization (SPC). These devices have the potential to deliver low-cost photovoltaic electricity and are named EVA cells (SPC of EVAporated a-Si). The RTA is used to perform a high-temperature (>700 °C) process for point defect annealing and dopant activation. RTA processes have predominantly been developed for wafer-based devices yet also have great potential for low-temperature devices such as thin-film pc-Si on glass solar cells. Parameter variations are performed on EVA solar cells to determine optimum values for point defect removal and dopant activation while minimizing dopant diffusion causing junction smearing. The 1-Sun open-circuit voltage, Voc, of the as-crystallized pc-Si devices is rather modest (135 mV). However, after RTA and subsequent hydrogen passivation in a rf PECVD plasma, a Voc of 454 mV is realized, representing a large improvement by a factor of 3.4. With an optimized passivation and dopant profile, a Voc greater than 500 mV is well within the reach of the EVA technology.
ACCESSION #
17227566

 

Related Articles

  • Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing. Conley Jr., J.F.; Ono, Y.; Tweet, D.J. // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1913 

    We find that the modulated temperature annealing of pulse-deposited high dielectric constant films, in which brief in situ elevated temperature anneals are performed after every deposition cycle, results in film densification, a reduction in interfacial layer thickness, and a strong improvement...

  • Mechanism and Conditions of Nanoisland Structures Formation by Vacuum Annealing of Ultrathin Metal Films. Tomilin, S. V.; Yanovsky, A. S. // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 3, p03014-1 

    The paper presents theoretical and experimental results of studies of nanoisland metallic coatings on semiconductor substrates obtained by vacuum annealing of ultrathin solid films. It is shown experimentally that the formation of islet structure is possible only for films with thickness above a...

  • Uniform MgB2 thin films grown on Si(111) and Al2O3(0001) substrates prepared by e-beam evaporation and in situ annealing methods. Yi Bing Zhang; Hong Mei Zhu; Shi Ping Zhou; Shi Ying Ding; Zhi Wei Lin; Jian Guo Zhu // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08M512 

    MgB2 superconducting thin films on Si(111) and Al2O3(0001) substrates were prepared by high vacuum e-beam evaporation and two-step in situ annealing techniques. The precursor films [B(100 Å)/Mg(151 Å)]6/Al2O3 (or Si) were deposited at room temperature and 1×10-7 mbar of background...

  • Reaction Time and Film Thickness Effects on Phase Formation and Optical Properties of Solution Processed CuZnSnS Thin Films. Safdar, Amna; Islam, Mohammad; Akram, Muhammad; Mujahid, Mohammad; Khalid, Yasir; Shah, S. // Journal of Materials Engineering & Performance;Feb2016, Vol. 25 Issue 2, p457 

    Copper-zinc-tin-sulfide (CuZnSnS or CZTS) is a promising p-type semiconductor material as absorber layer in thin film solar cells. The sulfides of copper and tin as well as zinc and sulfur powders were dissolved in hydrazine. The effect of chemical reaction between precursor species, at room...

  • The anomalous “stiffness” of biphenydimethyldithiol. Feng, D. Q.; Dowben, P. A.; Rajesh, R.; Redepenning, J. // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p181918 

    Although organic adsorbates and thin films are generally regarded as “soft” materials, the effective Debye temperature, indicative of the dynamic motion of lattice normal to the surface, can be very high. For biphenyldimethyldithiol, the effective Debye temperature, determined from...

  • Recrystallization behavior in chiral sculptured thin films from silicon. Schubert, E.; Fahlteich, J.; Rauschenbach, B.; Schubert, M.; Lorenz, M.; Grundmann, M.; Wagner, G. // Journal of Applied Physics;7/1/2006, Vol. 100 Issue 1, p016107 

    Chiral sculptured thin films, which contain amorphous silicon screws with a fiberlike fine structure, were grown by ion-beam-assisted glancing-angle deposition at room temperature. The thin films were postgrowth annealed in the temperature range from 400 to 1000 °C. Raman spectroscopy and...

  • Low-temperature formation (<500 °C) of poly-Ge thin-film transistor with NiGe Schottky source/drain. Sadoh, T.; Kamizuru, H.; Kenjo, A.; Miyao, M. // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p192114 

    Poly-Ge thin-film transistors (TFTs) with Schottky source/drain (S/D) contacts were fabricated on glass by low-temperature (<500 °C) processing. First, the annealing characteristics of Ni/crystal-Ge stacked structures were examined. The results indicated that NiGe/n-Ge Schottky contacts...

  • Structural and electrical characteristics of thin erbium oxide gate dielectrics. Tung-Ming Pan; Chun-Lin Chen; Wen Wei Yeh; Sung-Ju Hou // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222912 

    A high-k erbium oxide thin film was grown on silicon substrate by reactive rf sputtering. It is found that the capacitance value of Er2O3 gate dielectric with TaN metal gate annealed at 700 °C is higher compared to other annealing temperature and exhibits a lower hysteresis voltage as well as...

  • Influence of defects on the kinetic of C49–C54 TiSi2 transformation. La Via, F.; Mammoliti, F.; Grimaldi, M. G. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5577 

    TiSi2 C49 thin films with different concentrations of defects have been prepared by conventional annealing, in the 460–540 °C temperature range, of a Ti films deposited on a polycrystalline Si layer. The residual sheet resistance of the C49 films decreased with increasing both the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics