Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Drozdowicz-Tomsia, Krystyna; Goldys, Ewa M.; Motlan, Motlan; Zareie, Hadi; Phillips, Matthew R.
April 2005
Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173113
Academic Journal
Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.


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