On the band structure lineup of ZnO heterostructures

Mönch, Winfried
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p162101
Academic Journal
The interface-induced gap states (IFIGS) are the fundamental mechanism which determines the band structure lineup at semiconductor interfaces. The valence-band offsets of semiconductor heterostructures are given by the difference of the respective IFIGS branch-point energies and electric-dipole terms which may be omitted for elemental group-IV semiconductors, SiC, as well as the III–V, II–VI, and I–III–VI2 compounds and alloys. The branch-point energy of ZnO is determined as 3.04±0.21 eV from an analysis of experimental valence-band offsets reported for various ZnO heterostructures.


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