Structural control of self-assembled PbTiO3 nanoislands fabricated by metalorganic chemical vapor deposition

Hajime Nonomura; Masaki Nagata; Hironori Fujisawa; Masaru Shimizu; Hirohiko Niu; Koichiro Honda
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p163106
Academic Journal
Self-assembled PbTiO3 nanoislands of three different shapes with orderly in-plane directions were fabricated on Pt/SrTiO3 substrates by metalorganic chemical vapor deposition. The shapes of the nanoislands were triangular-shaped (width 50–110 nm, height 20–30 nm), triangular-prism-shaped (width 50–110 nm, length 100–550 nm, height 10–30 nm) and square-shaped (width 40–130 nm, height 4–10 nm) on Pt/SrTiO3(111), (101), and (001), respectively. The PbTiO3 nanoislands were epitaxially grown on the Pt/SrTiO3 substrates and consisted of {100} and {001} facets irrespective of the orientation of the substrates indicating that structural control of shape and in-plane direction of self-assembled PbTiO3 nanoislands can be achieved through epitaxial relations. The self-assembled PbTiO3 nanoislands with three different shapes were found to be ferroelectric by piezoresponse force microscopy.


Related Articles

  • Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition. Singh, M.P.; Thakur, C.S.; Shalini, K.; Banerjee, S.; Bhat, N.; Shivashankar, S.A. // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5631 

    We report the growth and characterization of gadolinium oxide films deposited on Si(100) and fused quartz in the temperature range of 450–800 °C by a low-pressure metalorganic chemical vapor deposition technique using a β-diketonate complex of gadolinium as the precursor. The x-ray...

  • High-power broad-area lasers fabricated by selective area growth. Yang, J. J.; Jansen, M.; Sergant, M.; Ou, S. S.; Wilcox, J. Z. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3984 

    Presents a study that fabricated high-power broad-area stripe lasers by using a one-step selective area growth technique in the metalorganic chemical vapor deposition system. Function of the growth technique; Scanning electron micrograph of the broad-area selective area growth laser (BASAGL);...

  • Fabricating Nanoporous Silica Structure on D-Fibres through Room Temperature Self-Assembly. John Canning; Lucas Moura; Lachlan Lindoy; Cook, Kevin; Crossley, Maxwell J.; Yanhua Luo; Gang-Ding Peng; Lars Glavind; Huyang, George; Naqshbandi, Masood; Kristensen, Martin; Cicero Martelli; Town, Graham // Materials (1996-1944);Mar2014, Vol. 7 Issue 3, p2356 

    The room temperature deposition of self-assembling silica nanoparticles onto D-shaped optical fibres ("D-fibre"), drawn from milled preforms fabricated by modified chemical vapour deposition (MCVD), is studied. Vertical dip-and-withdraw produces tapered layers, with one end thicker (surface...

  • Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer. Wang, T.; Bai, J.; Parbrook, P. J.; Cullis, A. G. // Applied Physics Letters;10/10/2005, Vol. 87 Issue 15, p151906 

    We demonstrated air-bridged lateral growth of an Al0.98Ga0.02N layer with significant dislocation reduction by introduction of a porous AlN buffer underneath via metalorganic chemical vapor deposition. By modifying growth conditions, a porous AlN layer and an atomically flat AlN layer have been...

  • Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow. Kohama, Y.; Uchida, K.; Soga, T.; Jimbo, T.; Umeno, M. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p862 

    GaP epilayers are grown on Si substrates after AsH3 preflow. Electron beam induced current observation and double-crystal x-ray diffraction show that the AsH3 preflow drastically improves crystalline quality of GaP epilayers. The full width at half-maximum of the (400) reflection obtained from...

  • Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic.... Kim, J.; Alwan, J.J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p28 

    Examines the chemical characterization of indium-gallium arsenide (GaAs)/aluminum GaAs strained interfaces grown by metalorganic chemical vapor deposition. Determination of the Al or In content; Causes for the asymmetry of the indium-containing systems; Use of quantitative chemical mapping.

  • A new InP-based heterojunction bipolar transistor utilizing an.... Wu, Y.H.; Su, J.S. // Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p347 

    Demonstrates a lattice-matched indium aluminum gallium arsenic/indium phosphide grown by low-pressure metalorganic chemical vapor deposition. Manifestation of zero conduction band and large valence band discontinuities; Resolution of the potential spike energy in a direct measurement technique;...

  • A model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers. Amir, N.; Fekete, D.; Nemirovsky, Y. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p871 

    Presents a study which proposed a model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers. Details of the calculation of the solid composition; Comparisons of the predictions of the model with measured data; Results and...

  • Metalorganic chemical vapor deposition on mesoscopic-structured substrates with closed topologies. Ishibashi, Akira; Ogawa, Masamichi; Funato, Kenji; Ugajin, Ryuichi; Mori, Yoshifumi // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2117 

    Presents a study which performed metalorganic chemical vapor deposition (MOCVD) on substances of closed topologies. Background on MOCVD; Results of the study; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics