TITLE

Spin control in heteromagnetic nanostructures

AUTHOR(S)
Scherbakov, A. V.; Akimov, A. V.; Yakovlev, D. R.; Ossau, W.; Hansen, L.; Waag, A.; Molenkamp, L. W.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p162104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We suggest and verify experimentally a concept of heteromagnetic semiconductor structures. It is based on spin diffusion between layers of the nanostructure with different magnetic properties and allows to control the spin-switching rate for magnetic ions. A ten times increase of spin-lattice relaxation rate of magnetic Mn ions is achieved in Zn1-xMnxSe/Be1-yMnyTe heteromagnetic structures with an inhomogeneous distribution of Mn ions.
ACCESSION #
17227499

 

Related Articles

  • Temperature of a Single Mn Atom in a CdTe Quantum Dot. Papierska, J.; Goryca, M.; Wojnar, P.; Kossacki, P. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p899 

    In this work we present a study of the temperature of the single magnetic atom embedded in a semiconductor quantum dot versus excitation power and magnetic field. This temperature is defined by the thermal distribution of spin states of single Mn ion, and results from its interaction with the...

  • Persistent room-temperature relaxation of InP amorphized and compacted by MeV ion beams. Cliche, L.; Roorda, S. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1754 

    Investigates the effect of ion beam amorphization on indium phosphide wafers. Induction of deformation and compaction; Loss of density in a spontaneous room-temperature relaxation; Occurrence of spontaneous annealing process.

  • Electron-beam driven relaxation oscillations in ferroelectric nanodisks. Ng, Nathaniel; Ahluwalia, Rajeev; Kumar, Ashok; Srolovitz, David J.; Chandra, Premala; Scott, James F. // Applied Physics Letters;10/12/2015, Vol. 107 Issue 15, p1 

    Using a combination of computational simulations, atomic-scale resolution imaging and phenomenological modelling, we examine the underlying mechanism for nanodomain restructuring in lead zirconate titanate nanodisks driven by electron beams. The observed subhertz nanodomain dynamics are...

  • Relaxation of vibrationally excited HCN[sup +] and DCN[sup +] ions in collisions with He. Wisthaler, A.; Hansel, A.; Schwarzmann, M.; Schwarzmann, M; Scheiring, Ch.; Lindinger, W.; Ferguson, E. E.; Ferguson, E.E. // Journal of Chemical Physics;1/8/2000, Vol. 112 Issue 2 

    A selected ion flow drift tube (SIFDT) has been used to measure vibrational quenching rate constants of HCN[sup +] and DCN[sup +] in collisions with He from 0.05 to 0.35 eV mean relative kinetic energy. The measured quenching rate constants fit linear Landau-Teller (L-T) plots in the 0.20 to...

  • Structural properties of partially relaxed In[sub x]Ga[sub 1-x]As layers grown on (100) and.... Maigne, P.; Roth, A.P. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p873 

    Investigates the structural properties of partially relaxed In[sub 0.20]Ga[sub 0.80]As layers grown simultaneously on (100) and misoriented GaAs substrates. Magnitude and direction of the tilt between layer and substrate; Influence of substrate misorientation on mismatch strain relaxation;...

  • Generation of Minority Charge Carriers at the Semiconductor Surface during Thermally Activated Ionic Depolarization of Metal—Insulator—Semiconductor Structures. Gol’dman, E. I.; Zhdan, A. G.; Kukharskaya, N. F.; Chucheva, G. V. // Semiconductors;Mar2000, Vol. 34 Issue 3, p277 

    Relaxation signals represented by the temperature dependences of current J(T) and high-frequency capacitance C(T) and generated in the course of the thermally stimulated depolarization of a metal-insulatorsemiconductor structure were analyzed numerically. Both the depletion of ionic traps...

  • New method of measuring relaxation times in semiconductors. Mukherjee, P.; Sheik-Bahaei, M.; Kwok, H. S. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p770 

    A new method of measuring relaxation times of free carriers in semiconductors is proposed and demonstrated. It is based on the pulse duration dependence of free-carrier absorption through the sample. This method has been demonstrated with GaAs and InSb.

  • Time-resolved photodissociation study of relaxation processes in gas-phase styrene ion. Dunbar, Robert C. // Journal of Chemical Physics;11/15/1989, Vol. 91 Issue 10, p6080 

    Time-resolved photodissociation of styrene ions at 308 nm was observed in the ion cyclotron resonance ion trap. The rate of m/z 78 product ion formation was shown to be a sensitive function of the internal energy of the dissociating parent ions. The dissociation rates, ranging up to 5×105...

  • Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures... Lin, H.T.; Rich, D.H.; Konkar, A.; Chen, P.; Madhukar, A. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3186 

    Investigates the carrier relaxation kinetics in GaAs/AlGaAs quantum heterostructures and nanostructures using time-resolved cathodoluminescence (CL). Quantum wells, wires, and boxes; Size reducing growth; Constant excitation CL spectroscopy and imaging; Time-resolved CL setup and measurements.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics