Role of light scattering in excimer laser annealing of Si

La Magna, Antonino; Alippi, Paola; Privitera, Vittorio; Fortunato, Guglielmo
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161905
Academic Journal
We have studied, by means of simulations and experiments, the interaction between the electromagnetic field, generated by excimer laser, and Si device. This study strictly refers to laser annealing process, recently attracting a broad interest as an alternative thermal treatment. Our numerical methodology is based on coupling the simulation of the electromagnetic field, for the calculation of the heat source distribution, and the simulations of the thermal, phase, and impurity fields. Simulations of laser irradiation in metal-oxide-semiconductor transistor structures are discussed and compared to the corresponding experimental analysis. Our results are useful to understand problematics and perspectives of the laser annealing application in the fabrication of scaled devices.


Related Articles

  • Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation. Sa´nchez, F.; Morenza, J. L.; Aguiar, R.; Delgado, J. C.; Varela, M. // Applied Physics Letters;7/29/1996, Vol. 69 Issue 5, p620 

    The effects of ArF excimer laser irradiation on silicon single crystals in air have been studied. The etch rate versus fluence curve shows three well defined zones, with very different etch rates and dependences. In the intermediate zone (from 1.5 to 2.5 J/cm2), narrow (1–2 μm...

  • Self-organized silicon microcolumn arrays generated by pulsed laser irradiation. Pedraza, A.J.; Fowlkes, J.D.; Lowndes, D.H. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS731 

    Abstract. Cumulative nanosecond pulsed excimer laser irradiation of silicon produces an array of high-aspect-ratio microcolumns that protrude well above the initial surface. The growth of these microcolumns is strongly affected by the gas environment, being enhanced in air or in other...

  • Activation of ion implanted dopants in alpha-SiC. Ahmed, S.; Barbero, C.J. // Applied Physics Letters;2/6/1995, Vol. 66 Issue 6, p712 

    Investigates the use of a pulsed excimer laser in the activation of ion implanted dopants in alpha silicon carbide (SiC). Process of annealing with the use of excimer laser; Extraction of carrier concentration of annealed layers; Comparison between pulsed laser and furnace annealing.

  • Strained-silicon formation on relaxed silicon–germanium/ silicon-on-insulator substrate using laser annealing. Mishima, Yasuyoshi; Ochimizu, Hirosato; Mimura, Atsushi // Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p072106 

    We propose a low-temperature process to fabricate strained silicon on silicon–germanium (SiGe)/silicon-on-insulator (SOI) substrates using excimer laser annealing technology. An excimer laser was used to relax the SiGe layer on the SOI substrate. We confirmed that laser power density...

  • Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing. Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi // Applied Physics Letters;12/17/2012, Vol. 101 Issue 25, p252106 

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated...

  • Post-metallization annealing of metal-tunnel oxide-silicon diodes. Lundgren, P.; Andersson, M. O.; Farmer, K. R. // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4780 

    Reports on a post-metallization annealing study of very thin oxide, aluminum gate metal-tunnel oxide-(p) silicon devices. Parameters that have been observed to influence the decrease in the number of electrically active defects at the oxide-silicon interface; Methods used in the fabrication of...

  • Dynamics of the hydrodynamical growth of columns on silicon exposed to ArF excimer-laser irradiation. Sánchez, F.; Morenza, J.L.; Aguiar, R.; Delgado, J.C.; Varela, M. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 1, p83 

    Abstract. We present new results about the development of the whiskerlike structures that grow on silicon single crystals exposed in air to ArF excimer-laser irradiation. Small depressions appear on the surface after 100-200 laser pulses. With the next pulses, the size of these depressions...

  • Enhanced formation of luminescent nanocrystal Si embedded in Si/SiO[sub 2] superlattice by excimer laser irradiation. Daigil Cha, R.; Shin, Jung H.; In-Hyuk Song; Min-Koo Han // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1287 

    The effect of excimer laser annealing on the formation of luminescent nanocrystal Si (nc-Si) embedded in Si/SiO[sub 2] superlattice is investigated. An amorphous Si/SiO[sub 2] superlattice consisting of 20 periods of 2 nm thin Si layers and 5 nm thin SiO[sub 2] layers was deposited on Si using...

  • Solid phase phosphorous activation in implanted silicon by excimer laser irradiation. Fisicaro, G.; Italia, M.; Privitera, V.; Piccitto, G.; Huet, K.; Venturini, J.; La Magna, A. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113513 

    The activation mechanism in phosphorous implanted silicon under excimer laser irradiation is investigated. The activation efficiency in the solid phase has been measured in a wide range of irradiation conditions, tuning the laser fluence in the sub-, partial, and total melting regime. Moreover,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics