TITLE

High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates

AUTHOR(S)
Manfra, M. J.; Pfeiffer, L. N.; West, K. W.; de Picciotto, R.; Baldwin, K. W.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p162106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1×1011 cm-2, a mobility of 106 cm² /Vs is achieved. At fixed carrier density p=1011 cm-2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 106 cm² /Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only ,10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier density of 3.6×1010 cm-2, a mobility of 800 000 cm² /Vs is achieved at T=15 mK.
ACCESSION #
17227482

 

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