Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy

Bussmann, E.; Zheng, N.; Williams, C. C.
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p163109
Academic Journal
Occupation of individual electron states near the surface of a SiO2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of the probe with respect to states near the dielectric surface, individual electrons are repeatably manipulated in and out of the sample. The single-electron charging and discharging is detected by frequency detection electrostatic force microscopy.


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