Quantum-cascade lasers without injector regions operating above room temperature

Friedrich, Andrea; Boehm, Gerhard; Amann, Markus Christian; Scarpa, Giuseppe
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161114
Academic Journal
We present above-room-temperature operation of an injectorless quantum-cascade (QC) laser. The active region is designed as a four-level staircase and has been realized in the strain-compensated material system Ga0.4In0.6As/Al0.56In0.44As based on InP. In pulsed operation the lasers work up to a heat-sink temperature of 340 K, the highest temperature achieved so far with injectorless QC lasers. A large wavelength shift is observed for higher bias fields and (therefore) at high temperatures (10 μm at 77 K and 8.4 μm at 300 K).


Related Articles

  • 1.3-μm InGaAsP distributed feedback laser. Dutta, N. K.; Napholtz, S. G.; Cella, T.; Wessel, T.; Brown, R. L.; Anthony, P. J. // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p1811 

    Presents a study which examined the fabrication and performance characteristics of indium gallium arsenic phosphide distributed feedback double-channel planar buried heterostructure laser. Information on InGaAsP semiconductor lasers; Spectral characteristics of the lasers; Measurement of the...

  • Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers. Yoo, Jae S.; Lee, Sang H.; Park, Gueorgui T.; Ko, Yong T.; Kim, Taeil // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1840 

    Presents a study which investigated the catastrophic optical damage in single quantum well indium gallium arsenic phosphide/indium gallium phosphide buried-heterostructure lasers. Sample preparation; Information on the causes of laser diode failures; Conclusions.

  • Wide-bandwidth and high-power InGaAsP distributed feedback lasers. Dutta, N. K.; Wang, S. J.; Piccirilli, A. B.; Karlicek, R. F.; Brown, R. L.; Washington, M.; Chakrabarti, U. K.; Gnauck, A. // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p4640 

    Focuses on a study which described the fabrication and performance characteristics of a wide-bandwidth indium gallium arsenic phosphide laser diode structure. Information on semiconductor injection lasers; Methodology of the study; Results and discussion.

  • Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion. Giehler, M.; Wienold, M.; Schrottke, L.; Hey, R.; Grahn, H. T.; Pavlov, S. G.; Hübers, H.-W.; Winnerl, S.; Schneider, H. // Journal of Applied Physics;Nov2011, Vol. 110 Issue 10, p103104 

    We investigate the effect of mid-infrared (MIR) pumping on the transport properties of GaAs/(Al,Ga)As terahertz (THz) quantum lasers (TQLs), which rely on quantum coherence effects of intersubband transitions. Aiming at THz lasing at elevated temperatures, we extend the concept of THz gain with...

  • Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers. Carrère, H.; Marie, X.; Barrau, J.; Amand, T. // Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071116 

    We have compared the calculated band structure and optical gain of compressively strained InGaAsN quantum-well lasers emitting at 1.3 μm with GaAs or GaAsP barriers. The GaAsP barriers yield a better hole confinement in the quantum well due to GaAsP larger band gap. We show that this can...

  • Spectrally resolved dynamics of inhomogeneously broadened gain in InAs/InP 1550 nm quantum-dash lasers. Hadass, D.; Alizon, R.; Dery, H.; Mikhelashvili, V.; Eisenstein, G.; Schwertberger, R.; Somers, A.; Reithmaier, J. P.; Forchel, A.; Calligaro, M.; Bansropun, S.; Krakowski, M. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5505 

    We report spectrally resolved dynamical properties of 1550 nm quantum-dash lasers. The dynamics are governed by the inhomogeneous broadening of the gain medium and by wavelength-dependent carrier capture and escape rates.

  • Characterization of 1.06 �m optical vortex laser based on a side-pumped Nd:GdVO4 bounce oscillator. Okida, M.; Hayashi, Y.; Omatsu, T.; Hamazaki, J.; Morita, R. // Applied Physics B: Lasers & Optics;Apr2009, Vol. 95 Issue 1, p69 

    We directly produced for the first time a high-power 1.06 �m vortex mode from a diode-pumped Nd:GdVO4 bounce amplifier. A maximum output of 17.8 W was achieved for a pump power of 55 W. The corresponding optical efficiency from the diode to the output was above 30%.

  • Nonequilibrium gain in optically pumped GaInNAs laser structures. Thränhardt, A.; Becker, S.; Schlichenmaier, C.; Kuznetsova, I.; Meier, T.; Koch, S. W.; Hader, J.; Moloney, J. V.; Chow, W. W. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5526 

    A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of...

  • Very low transparency currents in double quantum well InGaAs semiconductor lasers with δ-doped resonant tunneling. Fekete, D.; Yasin, M.; Rudra, A.; Kapon, E. // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p021109 

    It is demonstrated that n-type δ-doped resonant tunneling double quantum well (QW) lasers operated close to resonance exhibit an extremely low transparency current density of 14 A/cm2 per QW. This suggests that the threshold current is almost identical to that of the best reported single QW...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics