Depletion characteristics of two-dimensional lateral p-n-junctions

Reuter, D.; Werner, C.; Wieck, A. D.; Petrosyan, S.
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p162110
Academic Journal
We have fabricated two-dimensional in-plane p-n junctions from a p-doped pseudomorphic GaAs/In0.1Ga0.9As/Al0.35Ga0.65As heterostructure employing Si compensation doping by focused ion beam implantation. The current–voltage characteristics at room temperature showed good rectifying behavior, and the current in the reverse direction was below 1 nA for voltages up to 10 V. The depletion width was measured by optical beam-induced current, and a linear dependence on the reverse bias was found which is in contrast to the square root dependence observed in three-dimensional junctions. The results agree well with theoretical predictions.


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