TITLE

Near-field and far-field dynamics of (Al,In)GaN laser diodes

AUTHOR(S)
Schwarz, Ulrich T.; Pindl, Markus; Wegscheider, Werner; Eichler, Christoph; Scholz, Ferdinand; Furitsch, Michael; Leber, Andreas; Miller, Stephan; Lell, Alfred; Härle, Volker
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.
ACCESSION #
17227461

 

Related Articles

  • Infrared laser scanning microscopy in transmission: A new high-resolution technique for the study of inhomogeneities in bulk GaAs. Kidd, P.; Booker, G. R.; Stirland, D. J. // Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1331 

    This letter describes the use of the infrared laser scanning microscope in transmission to observe inhomogeneities in bulk GaAs. The results show that the technique achieves a high lateral resolution of [bar_over_tilde:_approx._equal_to]2 μm, and is able to detect low contrast intensity...

  • Near field scanning optical microscopy measurements of optical intensity distributions in semiconductor channel waveguides. Poweleit, C. D.; Naghski, David H.; Lindsay, Susan M.; Boyd, Joseph T.; Jackson, Howard E. // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3471 

    We present results of near field scanning optical microscopy measurements performed on single mode AlGaAs ridge channel waveguides. The optical intensity distribution just above the surface of the waveguide structure has been measured by scanning a tapered, aluminum-coated, fiber probe...

  • Improved characteristics of 660 nm AlGaInP red laser diodes by precise control of the V/III ratio in metal-organic vapor phase epitaxy. Ohgoh, Tsuyoshi; Mukai, Atsushi; Mukaiyama, Akihiro; Asano, Hideki; Hayakawa, Toshiro // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181117 

    The effects of the group V/III ratio during low-pressure metal-organic vapor phase epitaxy on laser performance have been investigated for GaInP/AlGaInP laser diodes. The quality of GaInP is found to be better at a V/III ratio much lower than an optimal V/III ratio for AlGaInP. GaInP/AlGaInP...

  • Optical investigations of InN nanodots capped by GaN at different temperatures. Ku, C. S.; Chou, W. C.; Lee, M. C. // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p1 

    InN nanodots capped with GaN for temperatures from 600 to 730 °C were investigated. While the dot emission intensity at 0.77 eV decreased with increasing capping temperature, two extra visible emission bands appeared around 2.37 eV (green band) and 2.96 eV (violet band). Furthermore, x ray...

  • Influence of carrier spreading on the current-controlled lateral-mode behavior of twin-stripe lasers. Watanabe, Masanobu; Mukai, Seiji; Itoh, Hideo; Yajima, Hiroyoshi; Saito, Masami; Hasegawa, Kohei // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2599 

    Examines near-field and far-field patterns, lasing efficiency and spectra of twin-stripe lasers as a function of the injected current ratio. Dependence of twin-stripe lasers on the carrier spreading; Peak position of the near-field patterns of the lasers; Diameter of the spectra of the most...

  • Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy. Douhe´ret, O.; Anand, S.; Barrios, C. Angulo; Lourdudoss, S. // Applied Physics Letters;8/5/2002, Vol. 81 Issue 6, p960 

    In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate GaAs/ AlGaAs buried heterostructure lasers. Laser mesas are buried with GaInP:Fe selectively regrown by hydride vapor phase epitaxy. It is shown that a complete 2D map of the electrical properties of...

  • High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μm. Noguchi, Yoshio; Yasaka, Hiroshi; Mikami, Osamu; Nagai, Haruo // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2665 

    Provides information on a study which developed an indium, gallium, arsenic and phosphorous superluminiscent diode using a buried bent absorbing waveguide structure and antireflection coating. Optical characteristics of the diode; Injection current dependence of emitting wavelength and spectral...

  • Dependence of leakage current on dislocations in GaN-based light-emitting diodes. Li, D.S.; Chen, H.; Yu, H.B.; Jia, H.Q.; Huang, Q.; Zhou, J.M. // Journal of Applied Physics;7/15/2004, Vol. 96 Issue 2, p1111 

    The reverse bias current-voltage (I-V) characteristics of GaN-based light-emitting diodes (LEDs) were investigated. The leakage current exhibits exponential dependence on the bias voltage with different exponents for various voltage ranges. The leakage current is closely related to the density...

  • Ambipolar diffusion of photoexcited carriers in bulk GaAs. Ruzicka, Brian A.; Werake, Lalani K.; Samassekou, Hassana; Zhao, Hui // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p262119 

    The ambipolar diffusion of carriers in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a pointlike spatial profile are excited by a tightly focused pump laser pulse. The spatiotemporal dynamics of the carriers are monitored by a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics