TITLE

Intracavity grating-confined all-epitaxial vertical-cavity surface-emitting laser based on selective interface Fermi-level pinning

AUTHOR(S)
Gazula, D.; Ahn, J.; Lu, D.; Huang, H.; Deppe, D. G.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An all-epitaxial GaAs-based vertical-cavity surface-emitting laser is demonstrated with an intracavity mode and current-confining grating. The grating uses selective Fermi-level pinning at a heterointerface to confine the current to the same regions as the optical mode. Despite the grating’s “coarseness,” an increase of efficiency is obtained in side-by-side comparison with devices that lack the grating.
ACCESSION #
17227460

 

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