Intracavity grating-confined all-epitaxial vertical-cavity surface-emitting laser based on selective interface Fermi-level pinning

Gazula, D.; Ahn, J.; Lu, D.; Huang, H.; Deppe, D. G.
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161117
Academic Journal
An all-epitaxial GaAs-based vertical-cavity surface-emitting laser is demonstrated with an intracavity mode and current-confining grating. The grating uses selective Fermi-level pinning at a heterointerface to confine the current to the same regions as the optical mode. Despite the grating’s “coarseness,” an increase of efficiency is obtained in side-by-side comparison with devices that lack the grating.


Related Articles

  • Doping and residual impurities in GaAs layers grown by close-spaced vapor transport. Le Bel, C.; Cossement, D.; Dodelet, J. P.; Leonelli, R.; DePuydt, Y.; Bertrand, P. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1288 

    Presents information on a study which used the close-spaced vapor transport technique to grow gallium arsenic epitaxial layers. Experimental proecures; Results; Discussion.

  • Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectors. Gourley, P. L.; Drummond, T. J.; Zipperian, T. E.; Reno, J. L.; Plut, T. A. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6578 

    Presents a study which investigated threshold characteristics of epitaxial aluminum (gallium,arsenic) surface-emitting lasers with integrated quarter-wave high reflectors. Method of the study; Results and discussion; Conclusion.

  • Classical scaling functions for moments of the order parameter profile in critical adsorption of a binary liquid mixture. Franck, Carl // Journal of Chemical Physics;6/15/1985, Vol. 82 Issue 12, p5633 

    Because knowledge of the moments of the order parameter profile is required to understand reflected light studies of critical adsorption of a liquid mixture, the scaling functions in classical Landau theory for the two lowest order moments have been calculated. A contact substrate-liquid...

  • Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy. Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5115 

    Provides information on a study concerning the effect of substrate misorientation on the incorporation of gallium and arsenic heterostructure. Observation on the relation between the heterostructure and molecular-beam epitaxy; Discussion of the electron transport properties of the structure;...

  • Influence of growth conditions on the lattice constant and composition of (Ga,Mn)As. Schott, G. M.; Schmidt, G.; Karczewski, G.; Molenkamp, L. W.; Jakiela, R.; Barcz, A. // Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4678 

    The lattice constant and the alloy composition of (Ga,Mn)As are investigated by high-resolution x-ray diffraction and secondary ion mass spectroscopy. The (Ga,Mn)As layers are grown by low-temperature molecular-beam epitaxy under various growth conditions. We find that, while the alloy...

  • Interband transitions in molecular-beam-epitaxial AlxGa1-xAs/GaAs. Aubel, J. L.; Reddy, U. K.; Sundaram, S.; Beard, W. T.; Comas, James // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p495 

    Examines the interband transition energies in aluminum[subx]gallium[sub1]_[subx]arsenic layers grown by molecular-beam epitaxy techniques. Experimental details; Results of the study; Discussion of findings.

  • Photoccurent study of molecular beam epitaxy GaAx grown at low temperature. Hozhabri, N.; Montoya, J. C. // Journal of Applied Physics;3/1/2000, Vol. 87 Issue 5, p2353 

    Provides information on a study which proposed models for the high resistivity of annealed low temperature-gallium arsenide. Samples used in the experiment; Results and discussion.

  • 1.3-μm InGaAsP distributed feedback laser. Dutta, N. K.; Napholtz, S. G.; Cella, T.; Wessel, T.; Brown, R. L.; Anthony, P. J. // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p1811 

    Presents a study which examined the fabrication and performance characteristics of indium gallium arsenic phosphide distributed feedback double-channel planar buried heterostructure laser. Information on InGaAsP semiconductor lasers; Spectral characteristics of the lasers; Measurement of the...

  • Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers. Yoo, Jae S.; Lee, Sang H.; Park, Gueorgui T.; Ko, Yong T.; Kim, Taeil // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1840 

    Presents a study which investigated the catastrophic optical damage in single quantum well indium gallium arsenic phosphide/indium gallium phosphide buried-heterostructure lasers. Sample preparation; Information on the causes of laser diode failures; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics