Reduced subpicosecond electron relaxation in GaNxAs1-x

Sinning, S.; Dekorsy, T.; Helm, M.; Mussler, G.; Däweritz, L.; Ploog, K. H.
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161912
Academic Journal
We report on time resolved femtosecond carrier dynamics in molecular beam epitaxy grown GaNxAs1-x with a nitrogen fraction of 1.3%. The intraband carrier relaxation time in GaNxAs1-x is found to be significantly larger than in GaAs. We compare the experimental results with carrier-polar optical phonon scattering rates calculated within the band anticrossing model. From the results we conclude that the slowing down of the carrier relaxation is a result of the strongly modified band structure in GaNxAs1-x.


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