Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

Suga, T.; Kameyama, S.; Yoshioka, S.; Yamamoto, T.; Tanaka, I.; Mizoguchi, T.
April 2005
Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p163113
Academic Journal
AlN thin films have been grown on c-cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5×10-4 Pa was used to examine the crystallographic orientation dependence of Al K-edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7×10-2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.


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