TITLE

Microfabricated strained substrates for Ge epitaxial growth

AUTHOR(S)
Evans, P. G.; Rugheimer, P. P.; Lagally, M. G.; Lee, C. H.; Lal, A.; Xiao, Y.; Lai, B.; Cai, Z.
PUB. DATE
May 2005
SOURCE
Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10M316
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The manipulation of strain in micromachined silicon structures presents an opportunity in the control of surface processes in epitaxial growth. With appropriate fabrication techniques, the magnitude, crystallographic direction, and symmetry of the strain at a Si surface can be precisely controlled with this strategy. Synchrotron x-ray microdiffraction techniques allow simultaneous independent measurements of the strain and bending in these structures and serve to calibrate the fabrication process. Bending is the dominant source of strain in a microfabricated Si bridge loaded at its ends by silicon nitride thin films that we have used as a strained substrate in studies of Ge epitaxial growth. The total strain difference between the top and bottom of the bent bridge exceeds 10-3 in present structures and can potentially be increased in optimized devices. These micromachined substrates complement other methods for producing strained silicon and silicon–germanium structures for improved electrical device performance and for fundamental studies of epitaxial growth.
ACCESSION #
17227421

 

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