Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+-implantation-assisted oxidation

Sadoh, T.; Matsuura, R.; Miyao, M.; Ninomiya, M.; Nakamae, M.; Enokida, T.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211901
Academic Journal
Effects of H+ implantation (<=5×1016 cm-2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (∼30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (>=1015 cm-2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGe/buried SiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.


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