Single-mode surface-emitting quantum-cascade lasers

Pflügl, C.; Austerer, M.; Schrenk, W.; Golka, S.; Strasser, G.; Green, R. P.; Wilson, L. R.; Cockburn, J. W.; Krysa, A. B.; Roberts, J. S.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211102
Academic Journal
We present high-power surface-emitting second-order distributed feedback quantum-cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular-beam epitaxy, showed single-mode peak output powers of 3 W at 78 K in pulsed operation. With the InP-based devices, which are grown by metalorganic vapor phase epitaxy, we obtained single-mode peak output powers of 1 W at room temperature. These are the highest output powers for surface emission of quantum-cascade lasers reported so far. The InP-based distributed feedback lasers also have very low threshold current densities and are working well above room temperature.


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