TITLE

Single-mode surface-emitting quantum-cascade lasers

AUTHOR(S)
Pflügl, C.; Austerer, M.; Schrenk, W.; Golka, S.; Strasser, G.; Green, R. P.; Wilson, L. R.; Cockburn, J. W.; Krysa, A. B.; Roberts, J. S.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present high-power surface-emitting second-order distributed feedback quantum-cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular-beam epitaxy, showed single-mode peak output powers of 3 W at 78 K in pulsed operation. With the InP-based devices, which are grown by metalorganic vapor phase epitaxy, we obtained single-mode peak output powers of 1 W at room temperature. These are the highest output powers for surface emission of quantum-cascade lasers reported so far. The InP-based distributed feedback lasers also have very low threshold current densities and are working well above room temperature.
ACCESSION #
17226949

 

Related Articles

  • Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures. Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S. // Semiconductors;Jan2009, Vol. 43 Issue 1, p112 

    Asymmetric Al0.3Ga0.7As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the...

  • [110] Orientated lead salt midinfrared lasers. Shi, Z.; Lv, X.; Zhao, F.; Majumdar, A.; Ray, D.; Singh, R.; Yan, X. J. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p2999 

    A Lead salt midinfrared quantum-well (QW) laser on [110] orientation is proposed. Theoretical simulations of [110] QW edge-emitting lasers show a 70° temperature increase in continuous-wave operation compared to the conventional [100]-orientated lasers. This is because the gain on...

  • 1.58 μm InGaAs quantum well laser on GaAs. Tångring, I.; Ni, H. Q.; Wu, B. P.; Wu, D. H.; Xiong, Y. H.; Huang, S. S.; Niu, Z. C.; Wang, S. M.; Lai, Z. H.; Larsson, A. // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p221101 

    We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As...

  • Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers. Ohtani, K.; Fujita, K.; Ohno, H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211113 

    We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 μm. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator...

  • Micro-pulling-down: A viable approach to the crystal growth of refractory rare-earth sesquioxides. Novoselov, A.; Mun, J.; Simura, R.; Yoshikawa, A.; Fukuda, T. // Inorganic Materials;Jul2007, Vol. 43 Issue 7, p729 

    The RE2O3 (RE = Y, Lu, Sc) sesquioxides are promising host materials for solid-state lasers owing to their low phonon energy and high thermal conductivity. Our results demonstrate that the micro-pulling-down method is a viable approach to the single-crystal growth of refractory rare-earth...

  • Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy. Troccoli, Mariano; Bour, David; Corzine, Scott; Höfler, Gloria; Tandon, Ashish; Mars, Dan; Smith, David J.; Diehl, Laurent; Capasso, Federico // Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5842 

    We report on the realization of InGaAs/InAlAs quantum-cascade lasers grown by metalorganic vapor phase epitaxy operating in continuous wave with low-threshold current densities at temperatures as high as 188 K. Threshold current densities of 950 A/cm2 and output powers of 125 mW are measured at...

  • High-differential-quantum-efficiency, long-wavelength vertical-cavity lasers using five-stage bipolar-cascade active regions. Koda, R.; Wang, C. S.; Lofgreen, D. D.; Coldren, L. A. // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211104 

    We present five-stage bipolar-cascade vertical-cavity surface-emitting lasers emitting at 1.54 μm grown monolithically on an InP substrate by molecular beam epitaxy. A differential quantum efficiency of 120%, was measured with a threshold current density of 767 A/cm2 and voltage of 4.49 V,...

  • Influence of Geometrical Parameters on the Critical Load in Three-Dimensional Stability Problems for Rectangular Plates and Beams. Kokhanenko, Yu. V.; Zelenskii, V. S. // International Applied Mechanics;Sep2003, Vol. 39 Issue 9, p1073 

    Two- and three-dimensional stability problems for a rectangular plate under uniaxial compression are solved by the mesh method. It is shown that the difference between the critical loads obtained in the three- and two-dimensional problems is not greater than 5% for arbitrary fixation conditions...

  • Basic enhancement of the overall optical efficiency of intracavity frequency-doubling devices for the 1 μm continuous-wave Nd:Y[sub 3]Al[sub 5]O[sub 12] laser emission. Lupei, V.; Pavel, N.; Taira, T. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3653 

    The possibility of basic enhancement of the overall optical-to-optical efficiency of intracavity frequency-doubling devices for the 1 μm continuous-wave (cw) Nd lasers by direct pumping into the emitting level and by using concentrated laser materials is discussed. This possibility is...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics