TITLE

Temperature dependence of electrical conductance in single-crystalline boron nanobelts

AUTHOR(S)
Kirihara, K.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p212101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We studied electrical transport in single-crystalline boron nanobelts with α-tetragonal crystalline structure. We obtained ohmic contacts to the boron nanobelts by metal electrodes of Ni/Au bilayer. From the temperature dependence of electrical conductance, we found that the boron nanobelt is a semiconductor. The electrical conductivity was of the order of 10-3 (Ω cm)-1 at 295 K. Fitting the results to variable-range-hopping conduction revealed a high density of localized states at the Fermi level compared with bulk β-rhombohedral boron.
ACCESSION #
17226948

 

Related Articles

  • Resistance fluctuations in ohmic contacts due to discreteness of dopants. Boudville, W. J.; McGill, T. C. // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p791 

    The role of fluctuations in the potential due to randomly distributed dopants in the depletion layer of a metal-semiconductor junction is explored. To be specific, the case of n-GaAs is considered. Monte Carlo simulation techniques are used to calculate the potential in the junction. By using...

  • In situ contacts to GaAs based on InAs. Wright, S. L.; Marks, R. F.; Tiwari, S.; Jackson, T. N.; Baratte, H. // Applied Physics Letters;12/1/1986, Vol. 49 Issue 22, p1545 

    We report preliminary electrical results on n+-InAs/n-GaAs contact structures grown by molecular beam epitaxy. The data indicate that the conduction-band discontinuity is sufficiently small to allow the formation of an ohmic contact to n-type GaAs for very heavily doped InAs layers. The...

  • Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n-GaN. Pelto, Christopher M.; Chang, Y. Austin; Chen, Yong; Williams, R. Stanley // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4283 

    The intermetallic TiAl[SUB3] has been used as a thermally stable cap for Ti/Al ohmic contacts to n-GaN. The electrical performance of the TiAl[SUB3]-capped contact is nearly the same as that of a standard Ti/Al/Ni/Au contact processed on the same substrate, but the Ti/Al/TiAl[SUB3] contact's...

  • Ohmic contacts and photoconductivity of individual ZnTe nanowires. Q. F. Meng; C. B. Jiang; S. X. Mao // Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG 

    Ohmic contacts to individual ZnTe nanowires were formed using Ni/Au multilayer electrodes. Measurements based on four terminals were carried out to test the current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ni/Au contacts is ∼5.2×10-2 Ω cm2...

  • The mechanism of current flow in an alloyed In-GaN ohmic contact. Blank, T.; Gol'dberg, Yu.; Konstantinov, O.; Nikitin, V.; Posse, E. // Semiconductors;Oct2006, Vol. 40 Issue 10, p1173 

    The resistance of alloyed In-GaN ohmic contact is studied experimentally. In the temperature range 180–320 K, the resistance per unit area increases with temperature, which is typical of metallic conduction and disagrees with current flow mechanisms associated with thermionic,...

  • Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN. Song, June O; Kim, Kyoung-Kook; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p479 

    We report on a promising Ni (5 nm)/Al-doped ZnO (AZO) (450 nm) metallization scheme for low resistance and transparent ohmic contacts to p-GaN (5 × 10[SUP17]cm[SUP-3]). It is shown that the as-deposited Ni/AZO contact shows a nonohmic characteristic due to the insulating nature of the...

  • Comment on “Contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN” [J. Appl. Phys. 95, 7940 (2004)]. Yow-Jon Lin // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p073707 

    The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad’s paper [J. Appl. Phys. 95, 7940 (2004)]. Mohammad’s study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the...

  • A silicon carbide thermistor. Boltovets, N. S.; Kholevchuk, V. V.; Konakova, R. V.; Kudryk, Ya. Ya.; Lytvyn, P. M.; Milenin, V. V.; Mitin, V. F.; Mitin, E. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 4, p67 

    We consider a silicon carbide thermistor with multilayer Au-TiBx-Ni2Si ohmic contacts intended for operation in the 77 to 450 K temperature range.

  • Ohmic contacts to p-type Al0.45Ga0.55N. Hull, B. A.; Mohney, S. E.; Chowdhury, U.; Dupuis, R. D. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7325 

    Ni, Pd, and Au Ohmic contacts to p-Al0.45Ga0.55N have been examined. We have observed that annealing the contacts in excess of 800 °C is required to minimize the contact resistivity. However, the Pd and Au contacts annealed in excess of 700 °C, which showed much better transport properties...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics