Temperature dependence of electrical conductance in single-crystalline boron nanobelts

Kirihara, K.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p212101
Academic Journal
We studied electrical transport in single-crystalline boron nanobelts with α-tetragonal crystalline structure. We obtained ohmic contacts to the boron nanobelts by metal electrodes of Ni/Au bilayer. From the temperature dependence of electrical conductance, we found that the boron nanobelt is a semiconductor. The electrical conductivity was of the order of 10-3 (Ω cm)-1 at 295 K. Fitting the results to variable-range-hopping conduction revealed a high density of localized states at the Fermi level compared with bulk β-rhombohedral boron.


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