One-dimensional transport of In2O3 nanowires

Liu, Fei; Bao, Mingqiang; Wang, Kang L.; Li, Chao; Lei, Bo; Zhou, Chongwu
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213101
Academic Journal
The gate-dependent one-dimensional transport of single-crystal In2O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (dIds/dVds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both current and differential conductance spectra due to the absence of the density of states in the source-drain energy window for a small Vds. The transport can be explained using conventional low-temperature field effect transistor theory. On the other hand, at a large gate bias when the Fermi energy of the nanowire moves up into its conduction band, the differential conductance of the semiconducting In2O3 nanowire exhibits zero-bias anomalies, following a power-law behavior.


Related Articles

  • Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy. Corfdir, P.; Van Hattem, B.; Uccelli, E.; Fontcuberta i Morral, A.; Phillips, R. T. // Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p133109 

    We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-blende segments of the nanowires. Excitons...

  • Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping. Hang, Qingling; Wang, Fudong; Buhro, William E.; Janes, David B. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062108 

    Nanowire field effect transistors have been fabricated using Cd doped InAs nanowires synthesized using a solution-liquid-solid technique. Both n-channel and p-channel characteristics have been observed, which implies that the surface Fermi level is not pinned in the conduction band. The...

  • Ultrasonic treatment-induced modification of the electrical properties of InAs p-n junctions. Sukach, A. V.; Teterkin, V. V. // Technical Physics Letters;Jun2009, Vol. 35 Issue 6, p514 

    The effect of a high-frequency ( f = 5 MHz) ultrasonic treatment (UST) on the low-temperature ( T = 77 K) electrical properties of smooth InAs p-n junctions has been studied. It is established that the most UST-sensitive parameter is the tunneling current component, which is probably related to...

  • Multistep metal insulator transition in VO2 nanowires on Al2O3 (0001) substrates. Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu // Applied Physics Letters;1/13/2014, Vol. 104 Issue 2, p023104-1 

    We observed a temperature- and voltage-induced multistep metal-insulator transition (MIT) in vanadium dioxide nanowires fabricated on Al2O3 (0001) substrates. Nanowires with a width of 200 nm showed a multistep MIT that exhibited a resistivity change of nearly two orders of magnitude in a 0.5K...

  • Ultrafast transient spectroscopy and photoluminescence properties of V2O5 nanowires. Othonos, Andreas; Christofides, Constantinos; Zervos, Matthew // Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p133112 

    The properties of V2O5 semiconductor nanowires have been investigated using ultrashort transient absorption spectroscopy in conjunction with time resolved photoluminescence. Femtosecond pulse excitation has been utilized to generate non equilibrium carrier densities above the band edge of the...

  • CUTTING EDGE.  // New Scientist;7/3/2004, Vol. 183 Issue 2454, p22 

    A material that displays exceptionally high conductivity when made into nanowires could help make nanometre-scale electronics a reality. Charles Lieber and colleagues at Harvard University coatedsilicon wires 20 nanometres thick with nickel and heated them to 550 °C. The resulting nickel...

  • Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires. Donglai Yao; Gang Zhang; Guo-Qiang Lo; Baowen Li // Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113113 

    We investigate the surface lattice and electronic structure of [110] oriented hydrogen-passivated silicon nanowires (SiNWs) of different cross-sectional shapes by using the first-principles tight-binding method. Remarkable quantum confinement effects are observed on the surface lattice constant...

  • Strain induced change of bandgap and effective mass in silicon nanowires. Shiri, Daryoush; Kong, Yifan; Buin, Andrei; Anantram, M. P. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073114 

    This work computationally investigates the electromechanical properties of hydrogen passivated silicon nanowires under uniaxial tensile strain. It has been observed that bandgap changes can be as large as 60 and 100 meV per 1% axial strain for [100] and [110] nanowires, respectively. This rate...

  • High-gain photoconductivity in semiconducting InN nanowires. Reui-San Chen; Tsang-Ho Yang; Hsin-Yi Chen; Li-Chyong Chen; Kuei-Hsien Chen; Ying-Jay Yang; Chun-Hsi Su; Chii-Ruey Lin // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162112 

    We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics