TITLE

One-dimensional transport of In2O3 nanowires

AUTHOR(S)
Liu, Fei; Bao, Mingqiang; Wang, Kang L.; Li, Chao; Lei, Bo; Zhou, Chongwu
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The gate-dependent one-dimensional transport of single-crystal In2O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (dIds/dVds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both current and differential conductance spectra due to the absence of the density of states in the source-drain energy window for a small Vds. The transport can be explained using conventional low-temperature field effect transistor theory. On the other hand, at a large gate bias when the Fermi energy of the nanowire moves up into its conduction band, the differential conductance of the semiconducting In2O3 nanowire exhibits zero-bias anomalies, following a power-law behavior.
ACCESSION #
17226943

 

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