Propagation properties of guided waves in index-guided two-dimensional optical waveguides

Kusunoki, Fuminori; Yotsuya, Tsutom; Takahara, Junichi; Kobayashi, Tetsuro
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211101
Academic Journal
Index-guided two-dimensional (2D) optical waveguides are numerically studied to investigate propagation properties of guided optical waves. The 2D optical waveguide consists of a dielectric thin film sandwiched between two semi-infinite metals. We demonstrate that vertically localized 2D optical waves can be laterally confined and guided by index guiding when the dielectric film has a high-refractive-index core and claddings of a lower index. The index guiding provides good optical power transmittance, otherwise optical power is rapidly attenuated due to lateral beam divergence.


Related Articles

  • Recrystallization behavior in chiral sculptured thin films from silicon. Schubert, E.; Fahlteich, J.; Rauschenbach, B.; Schubert, M.; Lorenz, M.; Grundmann, M.; Wagner, G. // Journal of Applied Physics;7/1/2006, Vol. 100 Issue 1, p016107 

    Chiral sculptured thin films, which contain amorphous silicon screws with a fiberlike fine structure, were grown by ion-beam-assisted glancing-angle deposition at room temperature. The thin films were postgrowth annealed in the temperature range from 400 to 1000 °C. Raman spectroscopy and...

  • Fatigue behavior of the electric pulse induced reversible resistance change effect in AgLa0.7Ca0.3MnO3Pt sandwich. Dong, R.; Wang, Q.; Chen, L.; Chen, T.; Li, X. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 1, p13 

    La0.7Ca0.3MnO3 (LCMO) films were prepared by a chemical solution deposition method on a Pt/Si substrate. Reversible resistance switching by electric pulses is observed in Ag/LCMO/Pt sandwich structures. This R switching behavior shows fatigue with time and applied pulse number. The voltage...

  • Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment. Cho, M.-H.; Chung, K. B.; Whang, C. N.; Ko, D.-H.; Lee, J. H.; Lee, N. I. // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p202902 

    The characteristics of nitrided HfO2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an NH3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of...

  • Modification of erbium radiative lifetime in planar silicon slot waveguides. Creatore, Celestino; Andreani, Lucio Claudio; Miritello, Maria; Lo Savio, Roberto; Priolo, Francesco // Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG 

    The authors report a systematic study of the lifetime of the 1.54 μm transition of Er3+-doped SiO2 thin film as active material in planar slot waveguides in polycrystalline silicon. The lifetime shows a strong reduction when compared with values measured in three other configurations. The...

  • UV written waveguide devices—Bragg gratings and Applications in Sensors. Smith, P. G. R.; Gawith, C. B. E.; Gates, J. C. G.; Kundys, D. M.; Adikan, F. R. Mahamd; Holmes, C. E.; Major, H. E.; Garcia-Ramirez, M.; Snow, B. D.; Kaczmarek, M. F.; Dyudusha, A. // AIP Conference Proceedings;Mar2010, Vol. 1217 Issue 1, p153 

    Ultra-violet laser direct writing provides a powerful way of creating integrated optical devices. The work reported here describes developments in this field, and particularly the use of two-beam writing to create Bragg gratings in planar integrated format. The work shows how these structures...

  • Amorphous to crystalline induced CoSi2phase formation in Co-implanted Si. S. Abhaya; G. Amarendra; S. Kalavathi; B. Panigrahi; S. Saroja; K. Nair; V. Sastry; C. Sundar // European Physical Journal - Applied Physics;Feb2008, Vol. 41 Issue 2, p107 

    Formation of CoSi2in Co implanted Si sample has been studied using glancing incidence X-ray diffraction and depth resolved positron annihilation techniques. The implanted sample exhibits near-surface amorphization in the temperature range between 300?K and 670?K. It is found that...

  • Structural and electrochemical performance of three-dimensional LiMn2O4 thin film. Bo Gun Park; Soohyun Kim; Il-Doo Kim; Yong Joon Park // Journal of Materials Science;Jul2010, Vol. 45 Issue 14, p3947 

    LiMn2O4 thin films with three-dimensional (3D) structure were prepared by the sol–gel method. Polystyrene beads (300 nm) were dispersed in the form of monolayers on Pt/Ti/SiO2/Si substrates, which were then used as templates for fabricating three-dimensionally ordered electrodes. A...

  • Electrical resistivity of Tin+1ACn (A = Si, Ge, Sn, n = 1-3) thin films. Emmerlich, Jens; Eklund, Per; Rittrich, Dirk; Högberg, Hans; Hultman, Lars // Journal of Materials Research;Aug2007, Vol. 22 Issue 8, p29 

    We have investigated the electrical resistivity of (0001)-oriented Tin+1ACn (A = Si, Ge, Sn, n = 1-3) thin films deposited by magnetron sputtering onto Al 2O3(0001) substrates at temperatures ranging from 500 to 950 °C. Four-point-probe measurements show that all films are good conductors...

  • Infrared dielectric function and phonon modes of Mg-rich cubic Mgx Zn1-xO (x>=0.67) thin films on sapphire (0001). Bundesmann, C.; Schubert, M.; Rahm, A.; Spemann, D.; Hochmuth, H.; Lorenz, M.; Grundmann, M. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p905 

    Infrared dielectric function spectra and phonon modes of single-phase rocksalt-type MgxZn1-xO thin films with 0.67≤x≤1 prepared by pulsed-laser deposition on c-plane sapphire substrates were obtained from infrared spectroscopic ellipsometry (360 cm-1 to 1500 cm-1). A one-mode...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics