Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

Noborisaka, Jinichiro; Motohisa, Junichi; Fukui, Takashi
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213102
Academic Journal
We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 μm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed.


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